Hydrogen passivation of cd acceptors in III–V semiconductors studied by PAC spectroscopy

Formation, structure, and stability of hydrogen correlated complexes, created at Cd acceptors in GaP, InP, and InAs have been studied after plasma charging as well as after H+ and/or He+ implantation at different energies. The different complexes were monitored by the perturbed angular correlation t...

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Detalles Bibliográficos
Autores principales: Forkel-Wirth, Doris, Achtziger, N, Burchard, A, Correia, J C, Deicher, M, Licht, T, Magerle, R, Marques, J G, Meier, J, Pfeiffer, W, Reislthner, U, Riib, M, Toulemonde, M, Witthuhn, W
Lenguaje:eng
Publicado: 1995
Materias:
Detectors and Experimental Techniques
Nuclear Physics - Experiment
Acceso en línea:https://dx.doi.org/10.1016/0038-1098(94)00811-6
http://cds.cern.ch/record/2857275

Internet

https://dx.doi.org/10.1016/0038-1098(94)00811-6
http://cds.cern.ch/record/2857275

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