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Hydrogen passivation of cd acceptors in III–V semiconductors studied by PAC spectroscopy
Formation, structure, and stability of hydrogen correlated complexes, created at Cd acceptors in GaP, InP, and InAs have been studied after plasma charging as well as after H+ and/or He+ implantation at different energies. The different complexes were monitored by the perturbed angular correlation t...
Autores principales: | , , , , , , , , , , , , , |
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Lenguaje: | eng |
Publicado: |
1995
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Materias: | |
Acceso en línea: | https://dx.doi.org/10.1016/0038-1098(94)00811-6 http://cds.cern.ch/record/2857275 |
_version_ | 1780977554866307072 |
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author | Forkel-Wirth, Doris Achtziger, N Burchard, A Correia, J C Deicher, M Licht, T Magerle, R Marques, J G Meier, J Pfeiffer, W Reislthner, U Riib, M Toulemonde, M Witthuhn, W |
author_facet | Forkel-Wirth, Doris Achtziger, N Burchard, A Correia, J C Deicher, M Licht, T Magerle, R Marques, J G Meier, J Pfeiffer, W Reislthner, U Riib, M Toulemonde, M Witthuhn, W |
author_sort | Forkel-Wirth, Doris |
collection | CERN |
description | Formation, structure, and stability of hydrogen correlated complexes, created at Cd acceptors in GaP, InP, and InAs have been studied after plasma charging as well as after H+ and/or He+ implantation at different energies. The different complexes were monitored by the perturbed angular correlation technique (PAC). In InP and Gap, the stability of Cd-H pairs is very similar for comparable Cd concentrations (ED = 1.4(2) eV and ED = 1.5(1) eV). In InAs, two different hydrogen correlated configurations are observed, one could be identified as Cd-H pair, oriented in 〈111〉 lattice direction (νQ = 427 MHz, η = 0). The second complex involves at least one H atom and radiation defects or, favoured by a defect induced, secondary mechanism several hydrogen atoms. |
id | cern-2857275 |
institution | Organización Europea para la Investigación Nuclear |
language | eng |
publishDate | 1995 |
record_format | invenio |
spelling | cern-28572752023-04-29T20:04:41Zdoi:10.1016/0038-1098(94)00811-6http://cds.cern.ch/record/2857275engForkel-Wirth, DorisAchtziger, NBurchard, ACorreia, J CDeicher, MLicht, TMagerle, RMarques, J GMeier, JPfeiffer, WReislthner, URiib, MToulemonde, MWitthuhn, WHydrogen passivation of cd acceptors in III–V semiconductors studied by PAC spectroscopyDetectors and Experimental TechniquesNuclear Physics - ExperimentFormation, structure, and stability of hydrogen correlated complexes, created at Cd acceptors in GaP, InP, and InAs have been studied after plasma charging as well as after H+ and/or He+ implantation at different energies. The different complexes were monitored by the perturbed angular correlation technique (PAC). In InP and Gap, the stability of Cd-H pairs is very similar for comparable Cd concentrations (ED = 1.4(2) eV and ED = 1.5(1) eV). In InAs, two different hydrogen correlated configurations are observed, one could be identified as Cd-H pair, oriented in 〈111〉 lattice direction (νQ = 427 MHz, η = 0). The second complex involves at least one H atom and radiation defects or, favoured by a defect induced, secondary mechanism several hydrogen atoms.oai:cds.cern.ch:28572751995 |
spellingShingle | Detectors and Experimental Techniques Nuclear Physics - Experiment Forkel-Wirth, Doris Achtziger, N Burchard, A Correia, J C Deicher, M Licht, T Magerle, R Marques, J G Meier, J Pfeiffer, W Reislthner, U Riib, M Toulemonde, M Witthuhn, W Hydrogen passivation of cd acceptors in III–V semiconductors studied by PAC spectroscopy |
title | Hydrogen passivation of cd acceptors in III–V semiconductors studied by PAC spectroscopy |
title_full | Hydrogen passivation of cd acceptors in III–V semiconductors studied by PAC spectroscopy |
title_fullStr | Hydrogen passivation of cd acceptors in III–V semiconductors studied by PAC spectroscopy |
title_full_unstemmed | Hydrogen passivation of cd acceptors in III–V semiconductors studied by PAC spectroscopy |
title_short | Hydrogen passivation of cd acceptors in III–V semiconductors studied by PAC spectroscopy |
title_sort | hydrogen passivation of cd acceptors in iii–v semiconductors studied by pac spectroscopy |
topic | Detectors and Experimental Techniques Nuclear Physics - Experiment |
url | https://dx.doi.org/10.1016/0038-1098(94)00811-6 http://cds.cern.ch/record/2857275 |
work_keys_str_mv | AT forkelwirthdoris hydrogenpassivationofcdacceptorsiniiivsemiconductorsstudiedbypacspectroscopy AT achtzigern hydrogenpassivationofcdacceptorsiniiivsemiconductorsstudiedbypacspectroscopy AT burcharda hydrogenpassivationofcdacceptorsiniiivsemiconductorsstudiedbypacspectroscopy AT correiajc hydrogenpassivationofcdacceptorsiniiivsemiconductorsstudiedbypacspectroscopy AT deicherm hydrogenpassivationofcdacceptorsiniiivsemiconductorsstudiedbypacspectroscopy AT lichtt hydrogenpassivationofcdacceptorsiniiivsemiconductorsstudiedbypacspectroscopy AT magerler hydrogenpassivationofcdacceptorsiniiivsemiconductorsstudiedbypacspectroscopy AT marquesjg hydrogenpassivationofcdacceptorsiniiivsemiconductorsstudiedbypacspectroscopy AT meierj hydrogenpassivationofcdacceptorsiniiivsemiconductorsstudiedbypacspectroscopy AT pfeifferw hydrogenpassivationofcdacceptorsiniiivsemiconductorsstudiedbypacspectroscopy AT reislthneru hydrogenpassivationofcdacceptorsiniiivsemiconductorsstudiedbypacspectroscopy AT riibm hydrogenpassivationofcdacceptorsiniiivsemiconductorsstudiedbypacspectroscopy AT toulemondem hydrogenpassivationofcdacceptorsiniiivsemiconductorsstudiedbypacspectroscopy AT witthuhnw hydrogenpassivationofcdacceptorsiniiivsemiconductorsstudiedbypacspectroscopy |