Cargando…

Hydrogen passivation of cd acceptors in III–V semiconductors studied by PAC spectroscopy

Formation, structure, and stability of hydrogen correlated complexes, created at Cd acceptors in GaP, InP, and InAs have been studied after plasma charging as well as after H+ and/or He+ implantation at different energies. The different complexes were monitored by the perturbed angular correlation t...

Descripción completa

Detalles Bibliográficos
Autores principales:	Forkel-Wirth, Doris, Achtziger, N, Burchard, A, Correia, J C, Deicher, M, Licht, T, Magerle, R, Marques, J G, Meier, J, Pfeiffer, W, Reislthner, U, Riib, M, Toulemonde, M, Witthuhn, W
Lenguaje:	eng
Publicado:	1995
Materias:	Detectors and Experimental Techniques Nuclear Physics - Experiment
Acceso en línea:	https://dx.doi.org/10.1016/0038-1098(94)00811-6 http://cds.cern.ch/record/2857275

Ejemplares similares

PAC-spectroscopy of acceptor-donor pairs in Si, Ge and GaAs
por: Achtziger, N, et al.
Publicado: (1989)

Acceptor-defect complexes in GaAs, studied by PAC spectroscopy
por: Baurichter, A, et al.
Publicado: (1989)

Interaction of hydrogen with Cd acceptons in GaP and InP
por: Forkel-Wirth, Doris, et al.
Publicado: (1994)

First PAC studies on the hydrogen diffusion in III-V semiconductors
por: Burchard, A, et al.
Publicado: (1996)

Microscopic Studies of the Hydrogen Passivation in n-type Silicon: A New Application of the 73As e--g PAC Technique
por: Correia, J G, et al.
Publicado: (1996)

Direct observation of acceptor-donor pairing in Si, Ge, GaAs by PAC spectroscopy
por: Deubler, S, et al.
Publicado: (1990)

Identification of deep bandgap states in $^{4}$H- and $^{6}$H-SiC by radio-tracer DLTS and PAC-spectroscopy
por: Achtziger, N, et al.
Publicado: (1998)

Acceptor-donor-pairs in germanium
por: Forkel-Wirth, Doris, et al.
Publicado: (1992)

Electric field gradients of acceptor-donor pairs in semiconductors
por: Burchard, A, et al.
Publicado: (1999)

Acceptor-hydrogen interaction in InAs
por: Burchard, A, et al.
Publicado: (1997)

Semiconductors with structurally determined vacancies: PAC studies
por: Dietrich, M, et al.
Publicado: (1999)

Implantation doping and hydrogen passivation of GaN
por: Burchard, A, et al.
Publicado: (1997)

Energetic radioactive ion beam studies of hydrogen in semiconductors
por: Forkel-Wirth, Doris, et al.
Publicado: (1994)

PAC studies on the formation and stability of acceptor-defect complexes in semiconductors
por: Deicher, M
Publicado: (1992)

Creation of Ga$_{As}$ antisites in GaAs by transmutation of radioactive $^{71}$As$_{As}$ to stable $^{71}$Ga$_{As}$
por: Magerle, R, et al.
Publicado: (1997)

Microscopical studies at cadmium impurities in compound semiconductors
por: Baurichter, A, et al.
Publicado: (1991)

Characterization of Cd implanted and annealed GaAs and InP by perturbed angular correlation (PAC) spectroscopy
por: Pfeiffer, Wolfgang, et al.
Publicado: (1991)

Structure and stability of cadmium-defect complexes in III-V compounds formed after H$_{2}$-plasma treatment
por: Baurichter, A, et al.
Publicado: (1992)

Acceptors in II-VI semiconductors - incorporation and complex formation
por: Burchard, A, et al.
Publicado: (1998)

Stability of acceptor-hydrogen complexes in semiconductors
por: Skudlik, H, et al.
Publicado: (1990)

PAC-and channeling experiments in YBa$_{2}$Cu$_{3}$O$_{7-x}$
por: Bartos, A, et al.
Publicado: (1990)

Semiconductor spectroscopy with short lived isotopes: Proposal to the ISOLDE Committee
por: Achtziger, N, et al.
Publicado: (1998)

Quadrupole interaction in ternary chalcopyrite semiconductors: experiments and theory
por: Dietrich, M, et al.
Publicado: (2000)

Proposal: microscopical studies of structural and electronic properties of semiconductors
por: Deicher, M, et al.
Publicado: (1990)

Nuclear, electrical and optical studies of hydrogen in semiconductors
por: Achtziger, N, et al.
Publicado: (1994)

Cd-H pairs in GaAs: identification and stability
por: Pfeiffer, Wolfgang, et al.
Publicado: (1991)

Nuclear, electrical and optical studies of hydrogen in semiconductors: status report and request for beam time, IS 345
por: Achtziger, N, et al.
Publicado: (1996)

Nuclear, electrical and optical studies of hydrogen in semiconductors: status report and request for beam time, IS 345
por: Achtziger, N, et al.
Publicado: (1998)

Radiotracer spectroscopy on group 2 acceptors in GaN
por: Reislöhner, U, et al.
Publicado: (2000)

Defect recovery of ion-implantd CdTe
por: Burchard, A, et al.
Publicado: (1996)

Passivation of electrically active centers by hydrogen and lithium in semiconductors
por: Baurichter, A, et al.
Publicado: (1991)

Identification of Ag-acceptor related photoluminescence in $^{111}\!$Ag doped CdTe
por: Hamann, J, et al.
Publicado: (1998)

Structural and electrical investigation of implantation damage annealing in CdTe
por: Achtziger, N, et al.
Publicado: (1996)

Identification of Ag-acceptors in $^{111}\!$Ag $^{111}\!$Cd doped ZnTe and CdTe
por: Hamann, J, et al.
Publicado: (2000)

Identification of Ag-acceptors in $^{111}Ag^{111}Cd$ doped ZnTe and CdTe
por: Hamann, J, et al.
Publicado: (2000)

Investigation of hydrogen in semiconductors by nuclear techniques
por: Deicher, M, et al.
Publicado: (1991)

Defects in InCu simultaneously observed by channelling and PAC
por: Lindner, G, et al.
Publicado: (1982)

Dependence of the electric field gradient of Ir in Fe on the direction of magnetization with respect to the crystallographic axes
por: Seewald, G, et al.
Publicado: (1997)

Combined electrical, optical and nuclear investigations of impurities and defects in II-VI semiconductors
por: Achtziger, N, et al.
Publicado: (1992)

Mössbauer study of the electronic configuration of Sb donors and acceptors in semiconductors
por: Kemerink, G J, et al.
Publicado: (1988)

Cannot write session to /tmp/vufind_sessions/sess_h7nill3hegjn17c8pu99r94nek