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Measurements of total ionizing dose effects in TPSCo 65 nm and influence of NMOS bulk bias
The CERN EP R&D; WP 1.2 aims to develop state-of-art monolithic pixel detectors using modern CMOS processes. The TPSCo 65 nm process is a suitable candidate and its radiation tolerance and sensor performance are therefore being studied. The impact of the back bias on the transistor behavior has...
| Autores principales: | , , , , , , , , |
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| Lenguaje: | eng |
| Publicado: |
2023
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1088/1748-0221/18/02/C02036 http://cds.cern.ch/record/2861836 |