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Measurements of total ionizing dose effects in TPSCo 65 nm and influence of NMOS bulk bias

The CERN EP R&D; WP 1.2 aims to develop state-of-art monolithic pixel detectors using modern CMOS processes. The TPSCo 65 nm process is a suitable candidate and its radiation tolerance and sensor performance are therefore being studied. The impact of the back bias on the transistor behavior has...

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Detalles Bibliográficos
Autores principales:	Dorda Martin, A, Ballabriga, R, Borghello, G, Campbell, M, Deng, W, Hong, G H, Kremastiotis, I, Snoeys, W, Termo, G
Lenguaje:	eng
Publicado:	2023
Materias:	Detectors and Experimental Techniques
Acceso en línea:	https://dx.doi.org/10.1088/1748-0221/18/02/C02036 http://cds.cern.ch/record/2861836

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