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Influence of temperature on measurements of the Two Photon Absorption – Transient Current Technique in silicon planar detectors using a 1550 nm femtosecond fibre laser
The effect of temperature on the excess charge carrier generation and collection, injected using two photon absorption at a wavelength of 1550 nm, is investigated in a 285 μm thick, p-type silicon planar detector, with a bulk resistivity of 3.7 kΩ cm. Charge collection measurements are performed for...
| Autores principales: | , , , , |
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| Lenguaje: | eng |
| Publicado: |
2023
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1016/j.nima.2023.168387 http://cds.cern.ch/record/2862116 |