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Rapid thermal annealing of ion-implanted Sb in silicon: a comparison of substitutional fractions from channeling, electrical and Mössbauer measurements
| Autores principales: | , , , , |
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| Lenguaje: | eng |
| Publicado: |
1985
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| Materias: | |
| Acceso en línea: | http://cds.cern.ch/record/286663 |