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Rapid thermal annealing of ion-implanted Sb in silicon: a comparison of substitutional fractions from channeling, electrical and Mössbauer measurements
| Autores principales: | , , , , |
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| Lenguaje: | eng |
| Publicado: |
1985
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| Materias: | |
| Acceso en línea: | http://cds.cern.ch/record/286663 |
| _version_ | 1780888338241159168 |
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| author | Nylandsted-Larsen, A Pedersen, F T Weyer, G Galloni, R Rizzoli, R |
| author_facet | Nylandsted-Larsen, A Pedersen, F T Weyer, G Galloni, R Rizzoli, R |
| author_sort | Nylandsted-Larsen, A |
| collection | CERN |
| id | cern-286663 |
| institution | Organización Europea para la Investigación Nuclear |
| language | eng |
| publishDate | 1985 |
| record_format | invenio |
| spelling | cern-2866632019-09-30T06:29:59Zhttp://cds.cern.ch/record/286663engNylandsted-Larsen, APedersen, F TWeyer, GGalloni, RRizzoli, RRapid thermal annealing of ion-implanted Sb in silicon: a comparison of substitutional fractions from channeling, electrical and Mössbauer measurementsOther Fields of Physicsoai:cds.cern.ch:2866631985 |
| spellingShingle | Other Fields of Physics Nylandsted-Larsen, A Pedersen, F T Weyer, G Galloni, R Rizzoli, R Rapid thermal annealing of ion-implanted Sb in silicon: a comparison of substitutional fractions from channeling, electrical and Mössbauer measurements |
| title | Rapid thermal annealing of ion-implanted Sb in silicon: a comparison of substitutional fractions from channeling, electrical and Mössbauer measurements |
| title_full | Rapid thermal annealing of ion-implanted Sb in silicon: a comparison of substitutional fractions from channeling, electrical and Mössbauer measurements |
| title_fullStr | Rapid thermal annealing of ion-implanted Sb in silicon: a comparison of substitutional fractions from channeling, electrical and Mössbauer measurements |
| title_full_unstemmed | Rapid thermal annealing of ion-implanted Sb in silicon: a comparison of substitutional fractions from channeling, electrical and Mössbauer measurements |
| title_short | Rapid thermal annealing of ion-implanted Sb in silicon: a comparison of substitutional fractions from channeling, electrical and Mössbauer measurements |
| title_sort | rapid thermal annealing of ion-implanted sb in silicon: a comparison of substitutional fractions from channeling, electrical and mössbauer measurements |
| topic | Other Fields of Physics |
| url | http://cds.cern.ch/record/286663 |
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