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Rapid thermal annealing of ion-implanted Sb in silicon: a comparison of substitutional fractions from channeling, electrical and Mössbauer measurements
Autores principales: | Nylandsted-Larsen, A, Pedersen, F T, Weyer, G, Galloni, R, Rizzoli, R |
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Lenguaje: | eng |
Publicado: |
1985
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Materias: | |
Acceso en línea: | http://cds.cern.ch/record/286663 |
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