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Applications of Mössbauer spectroscopy to characterize highly-doped semiconductors

Detalles Bibliográficos
Autor principal: Weyer, G
Lenguaje:eng
Publicado: 1988
Materias:
Acceso en línea:http://cds.cern.ch/record/286693
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author Weyer, G
author_facet Weyer, G
author_sort Weyer, G
collection CERN
id cern-286693
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 1988
record_format invenio
spelling cern-2866932019-09-30T06:29:59Zhttp://cds.cern.ch/record/286693engWeyer, GApplications of Mössbauer spectroscopy to characterize highly-doped semiconductorsOther Fields of Physicsoai:cds.cern.ch:2866931988
spellingShingle Other Fields of Physics
Weyer, G
Applications of Mössbauer spectroscopy to characterize highly-doped semiconductors
title Applications of Mössbauer spectroscopy to characterize highly-doped semiconductors
title_full Applications of Mössbauer spectroscopy to characterize highly-doped semiconductors
title_fullStr Applications of Mössbauer spectroscopy to characterize highly-doped semiconductors
title_full_unstemmed Applications of Mössbauer spectroscopy to characterize highly-doped semiconductors
title_short Applications of Mössbauer spectroscopy to characterize highly-doped semiconductors
title_sort applications of mössbauer spectroscopy to characterize highly-doped semiconductors
topic Other Fields of Physics
url http://cds.cern.ch/record/286693
work_keys_str_mv AT weyerg applicationsofmossbauerspectroscopytocharacterizehighlydopedsemiconductors