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Applications of Mössbauer spectroscopy to characterize highly-doped semiconductors
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Lenguaje: | eng |
Publicado: |
1988
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Acceso en línea: | http://cds.cern.ch/record/286693 |
_version_ | 1780888344320802816 |
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author | Weyer, G |
author_facet | Weyer, G |
author_sort | Weyer, G |
collection | CERN |
id | cern-286693 |
institution | Organización Europea para la Investigación Nuclear |
language | eng |
publishDate | 1988 |
record_format | invenio |
spelling | cern-2866932019-09-30T06:29:59Zhttp://cds.cern.ch/record/286693engWeyer, GApplications of Mössbauer spectroscopy to characterize highly-doped semiconductorsOther Fields of Physicsoai:cds.cern.ch:2866931988 |
spellingShingle | Other Fields of Physics Weyer, G Applications of Mössbauer spectroscopy to characterize highly-doped semiconductors |
title | Applications of Mössbauer spectroscopy to characterize highly-doped semiconductors |
title_full | Applications of Mössbauer spectroscopy to characterize highly-doped semiconductors |
title_fullStr | Applications of Mössbauer spectroscopy to characterize highly-doped semiconductors |
title_full_unstemmed | Applications of Mössbauer spectroscopy to characterize highly-doped semiconductors |
title_short | Applications of Mössbauer spectroscopy to characterize highly-doped semiconductors |
title_sort | applications of mössbauer spectroscopy to characterize highly-doped semiconductors |
topic | Other Fields of Physics |
url | http://cds.cern.ch/record/286693 |
work_keys_str_mv | AT weyerg applicationsofmossbauerspectroscopytocharacterizehighlydopedsemiconductors |