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Annealing behaviour of compound semiconductors after ion implantation investigated by emission-channeling and blocking

Detalles Bibliográficos
Autores principales: Jahn, S G, Hofsäss, H C, Wahl, U, Winter, S, Recknagel, E
Lenguaje:eng
Publicado: 1990
Materias:
Acceso en línea:http://cds.cern.ch/record/286778