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Annealing behaviour of compound semiconductors after ion implantation investigated by emission-channeling and blocking

Detalles Bibliográficos
Autores principales: Jahn, S G, Hofsäss, H C, Wahl, U, Winter, S, Recknagel, E
Lenguaje:eng
Publicado: 1990
Materias:
Acceso en línea:http://cds.cern.ch/record/286778
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author Jahn, S G
Hofsäss, H C
Wahl, U
Winter, S
Recknagel, E
author_facet Jahn, S G
Hofsäss, H C
Wahl, U
Winter, S
Recknagel, E
author_sort Jahn, S G
collection CERN
id cern-286778
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 1990
record_format invenio
spelling cern-2867782019-09-30T06:29:59Zhttp://cds.cern.ch/record/286778engJahn, S GHofsäss, H CWahl, UWinter, SRecknagel, EAnnealing behaviour of compound semiconductors after ion implantation investigated by emission-channeling and blockingOther Fields of Physicsoai:cds.cern.ch:2867781990
spellingShingle Other Fields of Physics
Jahn, S G
Hofsäss, H C
Wahl, U
Winter, S
Recknagel, E
Annealing behaviour of compound semiconductors after ion implantation investigated by emission-channeling and blocking
title Annealing behaviour of compound semiconductors after ion implantation investigated by emission-channeling and blocking
title_full Annealing behaviour of compound semiconductors after ion implantation investigated by emission-channeling and blocking
title_fullStr Annealing behaviour of compound semiconductors after ion implantation investigated by emission-channeling and blocking
title_full_unstemmed Annealing behaviour of compound semiconductors after ion implantation investigated by emission-channeling and blocking
title_short Annealing behaviour of compound semiconductors after ion implantation investigated by emission-channeling and blocking
title_sort annealing behaviour of compound semiconductors after ion implantation investigated by emission-channeling and blocking
topic Other Fields of Physics
url http://cds.cern.ch/record/286778
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AT hofsasshc annealingbehaviourofcompoundsemiconductorsafterionimplantationinvestigatedbyemissionchannelingandblocking
AT wahlu annealingbehaviourofcompoundsemiconductorsafterionimplantationinvestigatedbyemissionchannelingandblocking
AT winters annealingbehaviourofcompoundsemiconductorsafterionimplantationinvestigatedbyemissionchannelingandblocking
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