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Annealing behaviour of compound semiconductors after ion implantation investigated by emission-channeling and blocking

Detalles Bibliográficos
Autores principales:	Jahn, S G, Hofsäss, H C, Wahl, U, Winter, S, Recknagel, E
Lenguaje:	eng
Publicado:	1990
Materias:	Other Fields of Physics
Acceso en línea:	http://cds.cern.ch/record/286778

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