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Optimization of a 65 nm CMOS imaging process for monolithic CMOS sensors for high energy physics
The long term goal of the CERN Experimental Physics Department R&D; on monolithic sensorsis the development of sub-100nm CMOS sensors for high energy physics. The first technologyselected is the TPSCo 65nm CMOS imaging technology. A first submission MLR1 includedseveral small test chips with sen...
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Lenguaje: | eng |
Publicado: |
2023
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Materias: | |
Acceso en línea: | https://dx.doi.org/10.22323/1.420.0083 http://cds.cern.ch/record/2869866 |