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Optimization of a 65 nm CMOS imaging process for monolithic CMOS sensors for high energy physics
The long term goal of the CERN Experimental Physics Department R&D; on monolithic sensorsis the development of sub-100nm CMOS sensors for high energy physics. The first technologyselected is the TPSCo 65nm CMOS imaging technology. A first submission MLR1 includedseveral small test chips with sen...
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| Lenguaje: | eng |
| Publicado: |
2023
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.22323/1.420.0083 http://cds.cern.ch/record/2869866 |
| _version_ | 1780978307956736000 |
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| author | Rinella, G Aglieri Andronic, A Antonelli, M Baccomi, R Ballabriga, R Barbero, M Barrillon, P Baudot, J Becht, P Benotto, F Beole, S Bertolone, G Besson, A Bialas, W Borghello, G Braach, J Buckland, M Bugiel, S Buschmann, E Camerini, P Campbell, M Carnesecchi, F Cecconi, L Charbon, E Chauhan, A Colledani, C Contin, G Dannheim, D Dort, K de Melo, J Deng, W De Robertis, G Di Mauro, A Martin, A Dorda Dorokhov, A Dorosz, P Eberwein, G Bitar, Z El Fang, X Fenigstein, A Ferrero, C Fougeron, D Gajanana, D Goffe, M Gonella, L Grelli, A Gromov, V Habib, A Haim, A Hansen, K Hasenbichler, J Hillemanns, H Hong, G H Hu, C Isakov, A Jaaskelainen, K Junique, A Kotliarov, A Kremastiotis, I Krizek, F Kluge, A Kluit, R Kucharska, G Kugathasan, T Kwon, Y La Rocca, P Lautner, L Leitao, P Lim, B -H Loddo, F Mager, M Marras, D Martinengo, P Masciocchi, S Mathew, S Menzel, M W Morel, F Mulyanto, B Munker, M Musa, L Nakamura, M Pangaud, P Perciballi, S Pham, H Piro, F Prino, F Rachevski, S Rebane, K Reckleben, C Reidt, F Ricci, R Russo, R Sanna, I Sarritzu, V Savino, U Schledewitz, D Sedgwick, I Senyukov, S Snoeys, W Soltveit, H K Sonneveld, J Soudier, J Stachel, J Suzuki, M Svihra, P Suljic, M Takahashi, N Termo, G Tiltmann, N Toledano, E Triffiro, A Turcato, A Usai, G Valin, I Villani, A Van Beelen, J B Vassilev, M D Vernieri, C Vitkovskiy, A Wu, Y Yelkenci, A Yuncu, A |
| author_facet | Rinella, G Aglieri Andronic, A Antonelli, M Baccomi, R Ballabriga, R Barbero, M Barrillon, P Baudot, J Becht, P Benotto, F Beole, S Bertolone, G Besson, A Bialas, W Borghello, G Braach, J Buckland, M Bugiel, S Buschmann, E Camerini, P Campbell, M Carnesecchi, F Cecconi, L Charbon, E Chauhan, A Colledani, C Contin, G Dannheim, D Dort, K de Melo, J Deng, W De Robertis, G Di Mauro, A Martin, A Dorda Dorokhov, A Dorosz, P Eberwein, G Bitar, Z El Fang, X Fenigstein, A Ferrero, C Fougeron, D Gajanana, D Goffe, M Gonella, L Grelli, A Gromov, V Habib, A Haim, A Hansen, K Hasenbichler, J Hillemanns, H Hong, G H Hu, C Isakov, A Jaaskelainen, K Junique, A Kotliarov, A Kremastiotis, I Krizek, F Kluge, A Kluit, R Kucharska, G Kugathasan, T Kwon, Y La Rocca, P Lautner, L Leitao, P Lim, B -H Loddo, F Mager, M Marras, D Martinengo, P Masciocchi, S Mathew, S Menzel, M W Morel, F Mulyanto, B Munker, M Musa, L Nakamura, M Pangaud, P Perciballi, S Pham, H Piro, F Prino, F Rachevski, S Rebane, K Reckleben, C Reidt, F Ricci, R Russo, R Sanna, I Sarritzu, V Savino, U Schledewitz, D Sedgwick, I Senyukov, S Snoeys, W Soltveit, H K Sonneveld, J Soudier, J Stachel, J Suzuki, M Svihra, P Suljic, M Takahashi, N Termo, G Tiltmann, N Toledano, E Triffiro, A Turcato, A Usai, G Valin, I Villani, A Van Beelen, J B Vassilev, M D Vernieri, C Vitkovskiy, A Wu, Y Yelkenci, A Yuncu, A |
| author_sort | Rinella, G Aglieri |
| collection | CERN |
| description | The long term goal of the CERN Experimental Physics Department R&D; on monolithic sensorsis the development of sub-100nm CMOS sensors for high energy physics. The first technologyselected is the TPSCo 65nm CMOS imaging technology. A first submission MLR1 includedseveral small test chips with sensor and circuit prototypes and transistor test structures. One ofthe main questions to be addressed was how to optimize the sensor in the presence of significantin-pixel circuitry. In this paper this optimization is described as well as the experimental resultsfrom the MLR1 run confirming its effectiveness. A second submission investigating wafer-scalestitching has just been completed. This work has been carried out in strong synergy with the ITS3upgrade of the ALICE experiment. |
| id | cern-2869866 |
| institution | Organización Europea para la Investigación Nuclear |
| language | eng |
| publishDate | 2023 |
| record_format | invenio |
| spelling | cern-28698662023-09-10T18:38:37Zdoi:10.22323/1.420.0083http://cds.cern.ch/record/2869866engRinella, G AglieriAndronic, AAntonelli, MBaccomi, RBallabriga, RBarbero, MBarrillon, PBaudot, JBecht, PBenotto, FBeole, SBertolone, GBesson, ABialas, WBorghello, GBraach, JBuckland, MBugiel, SBuschmann, ECamerini, PCampbell, MCarnesecchi, FCecconi, LCharbon, EChauhan, AColledani, CContin, GDannheim, DDort, Kde Melo, JDeng, WDe Robertis, GDi Mauro, AMartin, A DordaDorokhov, ADorosz, PEberwein, GBitar, Z ElFang, XFenigstein, AFerrero, CFougeron, DGajanana, DGoffe, MGonella, LGrelli, AGromov, VHabib, AHaim, AHansen, KHasenbichler, JHillemanns, HHong, G HHu, CIsakov, AJaaskelainen, KJunique, AKotliarov, AKremastiotis, IKrizek, FKluge, AKluit, RKucharska, GKugathasan, TKwon, YLa Rocca, PLautner, LLeitao, PLim, B -HLoddo, FMager, MMarras, DMartinengo, PMasciocchi, SMathew, SMenzel, M WMorel, FMulyanto, BMunker, MMusa, LNakamura, MPangaud, PPerciballi, SPham, HPiro, FPrino, FRachevski, SRebane, KReckleben, CReidt, FRicci, RRusso, RSanna, ISarritzu, VSavino, USchledewitz, DSedgwick, ISenyukov, SSnoeys, WSoltveit, H KSonneveld, JSoudier, JStachel, JSuzuki, MSvihra, PSuljic, MTakahashi, NTermo, GTiltmann, NToledano, ETriffiro, ATurcato, AUsai, GValin, IVillani, AVan Beelen, J BVassilev, M DVernieri, CVitkovskiy, AWu, YYelkenci, AYuncu, AOptimization of a 65 nm CMOS imaging process for monolithic CMOS sensors for high energy physicsDetectors and Experimental TechniquesThe long term goal of the CERN Experimental Physics Department R&D; on monolithic sensorsis the development of sub-100nm CMOS sensors for high energy physics. The first technologyselected is the TPSCo 65nm CMOS imaging technology. A first submission MLR1 includedseveral small test chips with sensor and circuit prototypes and transistor test structures. One ofthe main questions to be addressed was how to optimize the sensor in the presence of significantin-pixel circuitry. In this paper this optimization is described as well as the experimental resultsfrom the MLR1 run confirming its effectiveness. A second submission investigating wafer-scalestitching has just been completed. This work has been carried out in strong synergy with the ITS3upgrade of the ALICE experiment.oai:cds.cern.ch:28698662023 |
| spellingShingle | Detectors and Experimental Techniques Rinella, G Aglieri Andronic, A Antonelli, M Baccomi, R Ballabriga, R Barbero, M Barrillon, P Baudot, J Becht, P Benotto, F Beole, S Bertolone, G Besson, A Bialas, W Borghello, G Braach, J Buckland, M Bugiel, S Buschmann, E Camerini, P Campbell, M Carnesecchi, F Cecconi, L Charbon, E Chauhan, A Colledani, C Contin, G Dannheim, D Dort, K de Melo, J Deng, W De Robertis, G Di Mauro, A Martin, A Dorda Dorokhov, A Dorosz, P Eberwein, G Bitar, Z El Fang, X Fenigstein, A Ferrero, C Fougeron, D Gajanana, D Goffe, M Gonella, L Grelli, A Gromov, V Habib, A Haim, A Hansen, K Hasenbichler, J Hillemanns, H Hong, G H Hu, C Isakov, A Jaaskelainen, K Junique, A Kotliarov, A Kremastiotis, I Krizek, F Kluge, A Kluit, R Kucharska, G Kugathasan, T Kwon, Y La Rocca, P Lautner, L Leitao, P Lim, B -H Loddo, F Mager, M Marras, D Martinengo, P Masciocchi, S Mathew, S Menzel, M W Morel, F Mulyanto, B Munker, M Musa, L Nakamura, M Pangaud, P Perciballi, S Pham, H Piro, F Prino, F Rachevski, S Rebane, K Reckleben, C Reidt, F Ricci, R Russo, R Sanna, I Sarritzu, V Savino, U Schledewitz, D Sedgwick, I Senyukov, S Snoeys, W Soltveit, H K Sonneveld, J Soudier, J Stachel, J Suzuki, M Svihra, P Suljic, M Takahashi, N Termo, G Tiltmann, N Toledano, E Triffiro, A Turcato, A Usai, G Valin, I Villani, A Van Beelen, J B Vassilev, M D Vernieri, C Vitkovskiy, A Wu, Y Yelkenci, A Yuncu, A Optimization of a 65 nm CMOS imaging process for monolithic CMOS sensors for high energy physics |
| title | Optimization of a 65 nm CMOS imaging process for monolithic CMOS sensors for high energy physics |
| title_full | Optimization of a 65 nm CMOS imaging process for monolithic CMOS sensors for high energy physics |
| title_fullStr | Optimization of a 65 nm CMOS imaging process for monolithic CMOS sensors for high energy physics |
| title_full_unstemmed | Optimization of a 65 nm CMOS imaging process for monolithic CMOS sensors for high energy physics |
| title_short | Optimization of a 65 nm CMOS imaging process for monolithic CMOS sensors for high energy physics |
| title_sort | optimization of a 65 nm cmos imaging process for monolithic cmos sensors for high energy physics |
| topic | Detectors and Experimental Techniques |
| url | https://dx.doi.org/10.22323/1.420.0083 http://cds.cern.ch/record/2869866 |
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