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Impact ionization in silicon at low charge-carrier energies

Photons absorbed in silicon produce electron–hole pairs, which can cause impact ionization and quantum yield larger than one. Reliable determination of quantum yield at low charge-carrier energies (<4 eV) has been challenging because photon losses due to reflectance and charge-carrier losses due...

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Detalles Bibliográficos
Autores principales: Korpusenko, Mikhail, Vaskuri, Anna, Manoocheri, Farshid, Ikonen, Erkki
Lenguaje:eng
Publicado: 2023
Acceso en línea:https://dx.doi.org/10.1063/5.0164405
http://cds.cern.ch/record/2875159