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Impact ionization in silicon at low charge-carrier energies

Photons absorbed in silicon produce electron–hole pairs, which can cause impact ionization and quantum yield larger than one. Reliable determination of quantum yield at low charge-carrier energies (<4 eV) has been challenging because photon losses due to reflectance and charge-carrier losses due...

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Autores principales: Korpusenko, Mikhail, Vaskuri, Anna, Manoocheri, Farshid, Ikonen, Erkki
Lenguaje:eng
Publicado: 2023
Acceso en línea:https://dx.doi.org/10.1063/5.0164405
http://cds.cern.ch/record/2875159
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author Korpusenko, Mikhail
Vaskuri, Anna
Manoocheri, Farshid
Ikonen, Erkki
author_facet Korpusenko, Mikhail
Vaskuri, Anna
Manoocheri, Farshid
Ikonen, Erkki
author_sort Korpusenko, Mikhail
collection CERN
description Photons absorbed in silicon produce electron–hole pairs, which can cause impact ionization and quantum yield larger than one. Reliable determination of quantum yield at low charge-carrier energies (<4 eV) has been challenging because photon losses due to reflectance and charge-carrier losses due to recombination affect the resulting photocurrent. Here, we present how the measurement of this fundamental characteristic of silicon crystals can be improved in the charge-carrier energy range of 1.6–4 eV by using a predictable quantum efficient detector based on induced junction photodiodes optimized for photon-to-electron conversion efficiency. The measured quantum yield values are compared with the results of theoretical calculations, revealing increased impact-ionization probabilities at 2.25 and 3.23 eV on the top of a smooth background curve calculated by a model based on free charge carriers in the silicon lattice. For the results at the lowest energies, both data and an asymptotic extrapolation model suggest that quantum yield exceeds unity by ∼10−4 at 1.6 eV corresponding to a photon wavelength of 450 nm.
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institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2023
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spelling cern-28751592023-10-10T22:59:40Zdoi:10.1063/5.0164405http://cds.cern.ch/record/2875159engKorpusenko, MikhailVaskuri, AnnaManoocheri, FarshidIkonen, ErkkiImpact ionization in silicon at low charge-carrier energiesPhotons absorbed in silicon produce electron–hole pairs, which can cause impact ionization and quantum yield larger than one. Reliable determination of quantum yield at low charge-carrier energies (<4 eV) has been challenging because photon losses due to reflectance and charge-carrier losses due to recombination affect the resulting photocurrent. Here, we present how the measurement of this fundamental characteristic of silicon crystals can be improved in the charge-carrier energy range of 1.6–4 eV by using a predictable quantum efficient detector based on induced junction photodiodes optimized for photon-to-electron conversion efficiency. The measured quantum yield values are compared with the results of theoretical calculations, revealing increased impact-ionization probabilities at 2.25 and 3.23 eV on the top of a smooth background curve calculated by a model based on free charge carriers in the silicon lattice. For the results at the lowest energies, both data and an asymptotic extrapolation model suggest that quantum yield exceeds unity by ∼10−4 at 1.6 eV corresponding to a photon wavelength of 450 nm.oai:cds.cern.ch:28751592023
spellingShingle Korpusenko, Mikhail
Vaskuri, Anna
Manoocheri, Farshid
Ikonen, Erkki
Impact ionization in silicon at low charge-carrier energies
title Impact ionization in silicon at low charge-carrier energies
title_full Impact ionization in silicon at low charge-carrier energies
title_fullStr Impact ionization in silicon at low charge-carrier energies
title_full_unstemmed Impact ionization in silicon at low charge-carrier energies
title_short Impact ionization in silicon at low charge-carrier energies
title_sort impact ionization in silicon at low charge-carrier energies
url https://dx.doi.org/10.1063/5.0164405
http://cds.cern.ch/record/2875159
work_keys_str_mv AT korpusenkomikhail impactionizationinsiliconatlowchargecarrierenergies
AT vaskurianna impactionizationinsiliconatlowchargecarrierenergies
AT manoocherifarshid impactionizationinsiliconatlowchargecarrierenergies
AT ikonenerkki impactionizationinsiliconatlowchargecarrierenergies