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Impact ionization in silicon at low charge-carrier energies
Photons absorbed in silicon produce electron–hole pairs, which can cause impact ionization and quantum yield larger than one. Reliable determination of quantum yield at low charge-carrier energies (<4 eV) has been challenging because photon losses due to reflectance and charge-carrier losses due...
Autores principales: | , , , |
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Lenguaje: | eng |
Publicado: |
2023
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Acceso en línea: | https://dx.doi.org/10.1063/5.0164405 http://cds.cern.ch/record/2875159 |
_version_ | 1780978878636883968 |
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author | Korpusenko, Mikhail Vaskuri, Anna Manoocheri, Farshid Ikonen, Erkki |
author_facet | Korpusenko, Mikhail Vaskuri, Anna Manoocheri, Farshid Ikonen, Erkki |
author_sort | Korpusenko, Mikhail |
collection | CERN |
description | Photons absorbed in silicon produce electron–hole pairs, which can cause impact ionization and quantum yield larger than one. Reliable determination of quantum yield at low charge-carrier energies (<4 eV) has been challenging because photon losses due to reflectance and charge-carrier losses due to recombination affect the resulting photocurrent. Here, we present how the measurement of this fundamental characteristic of silicon crystals can be improved in the charge-carrier energy range of 1.6–4 eV by using a predictable quantum efficient detector based on induced junction photodiodes optimized for photon-to-electron conversion efficiency. The measured quantum yield values are compared with the results of theoretical calculations, revealing increased impact-ionization probabilities at 2.25 and 3.23 eV on the top of a smooth background curve calculated by a model based on free charge carriers in the silicon lattice. For the results at the lowest energies, both data and an asymptotic extrapolation model suggest that quantum yield exceeds unity by ∼10−4 at 1.6 eV corresponding to a photon wavelength of 450 nm. |
id | cern-2875159 |
institution | Organización Europea para la Investigación Nuclear |
language | eng |
publishDate | 2023 |
record_format | invenio |
spelling | cern-28751592023-10-10T22:59:40Zdoi:10.1063/5.0164405http://cds.cern.ch/record/2875159engKorpusenko, MikhailVaskuri, AnnaManoocheri, FarshidIkonen, ErkkiImpact ionization in silicon at low charge-carrier energiesPhotons absorbed in silicon produce electron–hole pairs, which can cause impact ionization and quantum yield larger than one. Reliable determination of quantum yield at low charge-carrier energies (<4 eV) has been challenging because photon losses due to reflectance and charge-carrier losses due to recombination affect the resulting photocurrent. Here, we present how the measurement of this fundamental characteristic of silicon crystals can be improved in the charge-carrier energy range of 1.6–4 eV by using a predictable quantum efficient detector based on induced junction photodiodes optimized for photon-to-electron conversion efficiency. The measured quantum yield values are compared with the results of theoretical calculations, revealing increased impact-ionization probabilities at 2.25 and 3.23 eV on the top of a smooth background curve calculated by a model based on free charge carriers in the silicon lattice. For the results at the lowest energies, both data and an asymptotic extrapolation model suggest that quantum yield exceeds unity by ∼10−4 at 1.6 eV corresponding to a photon wavelength of 450 nm.oai:cds.cern.ch:28751592023 |
spellingShingle | Korpusenko, Mikhail Vaskuri, Anna Manoocheri, Farshid Ikonen, Erkki Impact ionization in silicon at low charge-carrier energies |
title | Impact ionization in silicon at low charge-carrier energies |
title_full | Impact ionization in silicon at low charge-carrier energies |
title_fullStr | Impact ionization in silicon at low charge-carrier energies |
title_full_unstemmed | Impact ionization in silicon at low charge-carrier energies |
title_short | Impact ionization in silicon at low charge-carrier energies |
title_sort | impact ionization in silicon at low charge-carrier energies |
url | https://dx.doi.org/10.1063/5.0164405 http://cds.cern.ch/record/2875159 |
work_keys_str_mv | AT korpusenkomikhail impactionizationinsiliconatlowchargecarrierenergies AT vaskurianna impactionizationinsiliconatlowchargecarrierenergies AT manoocherifarshid impactionizationinsiliconatlowchargecarrierenergies AT ikonenerkki impactionizationinsiliconatlowchargecarrierenergies |