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Impact ionization in silicon at low charge-carrier energies
Photons absorbed in silicon produce electron–hole pairs, which can cause impact ionization and quantum yield larger than one. Reliable determination of quantum yield at low charge-carrier energies (<4 eV) has been challenging because photon losses due to reflectance and charge-carrier losses due...
| Autores principales: | , , , |
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| Lenguaje: | eng |
| Publicado: |
2023
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| Acceso en línea: | https://dx.doi.org/10.1063/5.0164405 http://cds.cern.ch/record/2875159 |