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High-Energy Proton and Atmospheric-Neutron Irradiations of SiC Power MOSFETs: SEB Study and Impact on Channel and Drift Resistances
Accelerated single event burnout (SEB) tests with 200 MeV protons and atmospheric neutrons were performed for commercial silicon carbide (SiC) power MOSFETs with different architectures (i.e., planar gate, asymmetric trench, and symmetric trench). The average electric fields over the depletion layer...
| Autores principales: | , , , , , |
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| Lenguaje: | eng |
| Publicado: |
2023
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1109/TNS.2023.3267144 http://cds.cern.ch/record/2875186 |