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Defects studies in high-energy ion implanted semiconductors
| Autores principales: | , , |
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| Lenguaje: | eng |
| Publicado: |
1994
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| Materias: | |
| Acceso en línea: | http://cds.cern.ch/record/298215 |
| _version_ | 1780889240758910976 |
|---|---|
| author | Weyer, G Bonde-Nielsen, K Fanciulli, M |
| author_facet | Weyer, G Bonde-Nielsen, K Fanciulli, M |
| author_sort | Weyer, G |
| collection | CERN |
| id | cern-298215 |
| institution | Organización Europea para la Investigación Nuclear |
| language | eng |
| publishDate | 1994 |
| record_format | invenio |
| spelling | cern-2982152019-09-30T06:29:59Zhttp://cds.cern.ch/record/298215engWeyer, GBonde-Nielsen, KFanciulli, MDefects studies in high-energy ion implanted semiconductorsDetectors and Experimental TechniquesCERN-ISC-94-24ISC-I-12oai:cds.cern.ch:2982151994 |
| spellingShingle | Detectors and Experimental Techniques Weyer, G Bonde-Nielsen, K Fanciulli, M Defects studies in high-energy ion implanted semiconductors |
| title | Defects studies in high-energy ion implanted semiconductors |
| title_full | Defects studies in high-energy ion implanted semiconductors |
| title_fullStr | Defects studies in high-energy ion implanted semiconductors |
| title_full_unstemmed | Defects studies in high-energy ion implanted semiconductors |
| title_short | Defects studies in high-energy ion implanted semiconductors |
| title_sort | defects studies in high-energy ion implanted semiconductors |
| topic | Detectors and Experimental Techniques |
| url | http://cds.cern.ch/record/298215 |
| work_keys_str_mv | AT weyerg defectsstudiesinhighenergyionimplantedsemiconductors AT bondenielsenk defectsstudiesinhighenergyionimplantedsemiconductors AT fanciullim defectsstudiesinhighenergyionimplantedsemiconductors |