The Influence of Radiation Damage on the Deflection of High-Energy Beams in Bent Silicon Crystals

Experimental results obtained for deflection of 450 GeV/c protons channeling along the {111} planes in a bent, strongly irradiated silicon crystal are presented. A comparison between the deflection efficiencies in irradiated areas and non-irradiated areas in the crystal shows that irradiation by 2.4...

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Detalles Bibliográficos
Autores principales: Biino, C, Clément, C, Doble, Niels T, Elsener, K, Gatignon, L, Grafström, P, Mikkelsen, U, Kirsebom, K, Møller, S P, Uggerhøj, Erik, Worm, T
Lenguaje:eng
Publicado: 1996
Materias:
Accelerators and Storage Rings
Acceso en línea:http://cds.cern.ch/record/308375

Internet

http://cds.cern.ch/record/308375

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