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Experimental results on radiation-induced bulk damage effects in float-zone and epitaxial silicon detectors
A comparative study of the radiation hardness of silicon pad detectors, manufactured from Float-Zone and Epitaxial n-type monocrystals and irradiated with protons and neutrons up to a fluence of 3.5 1014 cm-2 is presented. The results are compared in terms of their reverse current, depletion voltage...
| Autores principales: | , , , , |
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| Lenguaje: | eng |
| Publicado: |
1996
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1016/S0168-9002(96)01112-6 http://cds.cern.ch/record/311362 |