Experimental results on radiation-induced bulk damage effects in float-zone and epitaxial silicon detectors

A comparative study of the radiation hardness of silicon pad detectors, manufactured from Float-Zone and Epitaxial n-type monocrystals and irradiated with protons and neutrons up to a fluence of 3.5 1014 cm-2 is presented. The results are compared in terms of their reverse current, depletion voltage...

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Detalles Bibliográficos
Autores principales: Dezillie, B, Lemeilleur, F, Glaser, M, Casse, G L, Leroy, C
Lenguaje:eng
Publicado: 1996
Materias:
Detectors and Experimental Techniques
Acceso en línea:https://dx.doi.org/10.1016/S0168-9002(96)01112-6
http://cds.cern.ch/record/311362
Descripción
Sumario:A comparative study of the radiation hardness of silicon pad detectors, manufactured from Float-Zone and Epitaxial n-type monocrystals and irradiated with protons and neutrons up to a fluence of 3.5 1014 cm-2 is presented. The results are compared in terms of their reverse current, depletion voltage, and charge collection as a function of fluence during irradiation and as a function of time after irradiation.

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