Experimental results on radiation-induced bulk damage effects in float-zone and epitaxial silicon detectors

A comparative study of the radiation hardness of silicon pad detectors, manufactured from Float-Zone and Epitaxial n-type monocrystals and irradiated with protons and neutrons up to a fluence of 3.5 1014 cm-2 is presented. The results are compared in terms of their reverse current, depletion voltage...

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Detalles Bibliográficos
Autores principales: Dezillie, B, Lemeilleur, F, Glaser, M, Casse, G L, Leroy, C
Lenguaje:eng
Publicado: 1996
Materias:
Detectors and Experimental Techniques
Acceso en línea:https://dx.doi.org/10.1016/S0168-9002(96)01112-6
http://cds.cern.ch/record/311362
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author Dezillie, B
Lemeilleur, F
Glaser, M
Casse, G L
Leroy, C
author_facet Dezillie, B
Lemeilleur, F
Glaser, M
Casse, G L
Leroy, C
author_sort Dezillie, B
collection CERN
description A comparative study of the radiation hardness of silicon pad detectors, manufactured from Float-Zone and Epitaxial n-type monocrystals and irradiated with protons and neutrons up to a fluence of 3.5 1014 cm-2 is presented. The results are compared in terms of their reverse current, depletion voltage, and charge collection as a function of fluence during irradiation and as a function of time after irradiation.
id cern-311362
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 1996
record_format invenio
spelling cern-3113622019-09-30T06:29:59Zdoi:10.1016/S0168-9002(96)01112-6http://cds.cern.ch/record/311362engDezillie, BLemeilleur, FGlaser, MCasse, G LLeroy, CExperimental results on radiation-induced bulk damage effects in float-zone and epitaxial silicon detectorsDetectors and Experimental TechniquesA comparative study of the radiation hardness of silicon pad detectors, manufactured from Float-Zone and Epitaxial n-type monocrystals and irradiated with protons and neutrons up to a fluence of 3.5 1014 cm-2 is presented. The results are compared in terms of their reverse current, depletion voltage, and charge collection as a function of fluence during irradiation and as a function of time after irradiation.CERN-ECP-96-008CERN-ECP-96-08CERN-ECP-96-8oai:cds.cern.ch:3113621996-07-30
spellingShingle Detectors and Experimental Techniques
Dezillie, B
Lemeilleur, F
Glaser, M
Casse, G L
Leroy, C
Experimental results on radiation-induced bulk damage effects in float-zone and epitaxial silicon detectors
title Experimental results on radiation-induced bulk damage effects in float-zone and epitaxial silicon detectors
title_full Experimental results on radiation-induced bulk damage effects in float-zone and epitaxial silicon detectors
title_fullStr Experimental results on radiation-induced bulk damage effects in float-zone and epitaxial silicon detectors
title_full_unstemmed Experimental results on radiation-induced bulk damage effects in float-zone and epitaxial silicon detectors
title_short Experimental results on radiation-induced bulk damage effects in float-zone and epitaxial silicon detectors
title_sort experimental results on radiation-induced bulk damage effects in float-zone and epitaxial silicon detectors
topic Detectors and Experimental Techniques
url https://dx.doi.org/10.1016/S0168-9002(96)01112-6
http://cds.cern.ch/record/311362
work_keys_str_mv AT dezillieb experimentalresultsonradiationinducedbulkdamageeffectsinfloatzoneandepitaxialsilicondetectors
AT lemeilleurf experimentalresultsonradiationinducedbulkdamageeffectsinfloatzoneandepitaxialsilicondetectors
AT glaserm experimentalresultsonradiationinducedbulkdamageeffectsinfloatzoneandepitaxialsilicondetectors
AT cassegl experimentalresultsonradiationinducedbulkdamageeffectsinfloatzoneandepitaxialsilicondetectors
AT leroyc experimentalresultsonradiationinducedbulkdamageeffectsinfloatzoneandepitaxialsilicondetectors

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