First PAC studies on the hydrogen diffusion in III-V semiconductors

We report on first experiments which observe on a microscopic scale the migration of isolated hydrogen in InP, InAs and GaAs. Using the radioactive acceptor 117Cd, Cd-H pairs have been formed in these III-V semiconductors. After the decay of 117Cd to 117In, H is no longer bound to 117In and can diff...

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Detalles Bibliográficos
Autores principales: Burchard, A, Deicher, M, Fedosseev, V, Forkel-Wirth, Doris, Magerle, R, Mishin, V I, Egenter, A, Spengler, R
Lenguaje:eng
Publicado: 1996
Materias:
Condensed Matter
Acceso en línea:http://cds.cern.ch/record/316270

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http://cds.cern.ch/record/316270

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