First PAC studies on the hydrogen diffusion in III-V semiconductors

We report on first experiments which observe on a microscopic scale the migration of isolated hydrogen in InP, InAs and GaAs. Using the radioactive acceptor 117Cd, Cd-H pairs have been formed in these III-V semiconductors. After the decay of 117Cd to 117In, H is no longer bound to 117In and can diff...

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Detalles Bibliográficos
Autores principales: Burchard, A, Deicher, M, Fedosseev, V, Forkel-Wirth, Doris, Magerle, R, Mishin, V I, Egenter, A, Spengler, R
Lenguaje:eng
Publicado: 1996
Materias:
Condensed Matter
Acceso en línea:http://cds.cern.ch/record/316270
Descripción
Sumario:We report on first experiments which observe on a microscopic scale the migration of isolated hydrogen in InP, InAs and GaAs. Using the radioactive acceptor 117Cd, Cd-H pairs have been formed in these III-V semiconductors. After the decay of 117Cd to 117In, H is no longer bound to 117In and can diffuse freely. This diffusion has been observed by perturbed gg angular correlation (PAC) spectroscopy. At 10 K, the occupation of two different lattice sites by hydrogen has been observed.

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