First PAC studies on the hydrogen diffusion in III-V semiconductors

We report on first experiments which observe on a microscopic scale the migration of isolated hydrogen in InP, InAs and GaAs. Using the radioactive acceptor 117Cd, Cd-H pairs have been formed in these III-V semiconductors. After the decay of 117Cd to 117In, H is no longer bound to 117In and can diff...

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Detalles Bibliográficos
Autores principales: Burchard, A, Deicher, M, Fedosseev, V, Forkel-Wirth, Doris, Magerle, R, Mishin, V I, Egenter, A, Spengler, R
Lenguaje:eng
Publicado: 1996
Materias:
Condensed Matter
Acceso en línea:http://cds.cern.ch/record/316270
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author Burchard, A
Deicher, M
Fedosseev, V
Forkel-Wirth, Doris
Magerle, R
Mishin, V I
Egenter, A
Spengler, R
author_facet Burchard, A
Deicher, M
Fedosseev, V
Forkel-Wirth, Doris
Magerle, R
Mishin, V I
Egenter, A
Spengler, R
author_sort Burchard, A
collection CERN
description We report on first experiments which observe on a microscopic scale the migration of isolated hydrogen in InP, InAs and GaAs. Using the radioactive acceptor 117Cd, Cd-H pairs have been formed in these III-V semiconductors. After the decay of 117Cd to 117In, H is no longer bound to 117In and can diffuse freely. This diffusion has been observed by perturbed gg angular correlation (PAC) spectroscopy. At 10 K, the occupation of two different lattice sites by hydrogen has been observed.
id cern-316270
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 1996
record_format invenio
spelling cern-3162702019-09-30T06:29:59Zhttp://cds.cern.ch/record/316270engBurchard, ADeicher, MFedosseev, VForkel-Wirth, DorisMagerle, RMishin, V IEgenter, ASpengler, RFirst PAC studies on the hydrogen diffusion in III-V semiconductorsCondensed MatterWe report on first experiments which observe on a microscopic scale the migration of isolated hydrogen in InP, InAs and GaAs. Using the radioactive acceptor 117Cd, Cd-H pairs have been formed in these III-V semiconductors. After the decay of 117Cd to 117In, H is no longer bound to 117In and can diffuse freely. This diffusion has been observed by perturbed gg angular correlation (PAC) spectroscopy. At 10 K, the occupation of two different lattice sites by hydrogen has been observed.CERN-PPE-96-159oai:cds.cern.ch:3162701996-11-15
spellingShingle Condensed Matter
Burchard, A
Deicher, M
Fedosseev, V
Forkel-Wirth, Doris
Magerle, R
Mishin, V I
Egenter, A
Spengler, R
First PAC studies on the hydrogen diffusion in III-V semiconductors
title First PAC studies on the hydrogen diffusion in III-V semiconductors
title_full First PAC studies on the hydrogen diffusion in III-V semiconductors
title_fullStr First PAC studies on the hydrogen diffusion in III-V semiconductors
title_full_unstemmed First PAC studies on the hydrogen diffusion in III-V semiconductors
title_short First PAC studies on the hydrogen diffusion in III-V semiconductors
title_sort first pac studies on the hydrogen diffusion in iii-v semiconductors
topic Condensed Matter
url http://cds.cern.ch/record/316270
work_keys_str_mv AT burcharda firstpacstudiesonthehydrogendiffusioniniiivsemiconductors
AT deicherm firstpacstudiesonthehydrogendiffusioniniiivsemiconductors
AT fedosseevv firstpacstudiesonthehydrogendiffusioniniiivsemiconductors
AT forkelwirthdoris firstpacstudiesonthehydrogendiffusioniniiivsemiconductors
AT magerler firstpacstudiesonthehydrogendiffusioniniiivsemiconductors
AT mishinvi firstpacstudiesonthehydrogendiffusioniniiivsemiconductors
AT egentera firstpacstudiesonthehydrogendiffusioniniiivsemiconductors
AT spenglerr firstpacstudiesonthehydrogendiffusioniniiivsemiconductors

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