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Study of charge transport in non-irradiated and irradiated silicon detectors
The electrical characteristics of non-irradiated and irradiated n-type silicon detectors (p -n -n diode) are extracted by fitting a charge transport model to a set of experimental data obtained from the measurememt of the current pulse response induced by a and b particles. . The detectors were irra...
| Autores principales: | , , , , , |
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| Lenguaje: | eng |
| Publicado: |
1998
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1016/S0168-9002(98)01478-8 http://cds.cern.ch/record/361952 |