Study of charge transport in non-irradiated and irradiated silicon detectors

The electrical characteristics of non-irradiated and irradiated n-type silicon detectors (p -n -n diode) are extracted by fitting a charge transport model to a set of experimental data obtained from the measurememt of the current pulse response induced by a and b particles. . The detectors were irra...

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Detalles Bibliográficos
Autores principales: Leroy, C, Roy, P, Casse, G L, Glaser, M, Grigoriev, E A, Lemeilleur, F
Lenguaje:eng
Publicado: 1998
Materias:
Detectors and Experimental Techniques
Acceso en línea:https://dx.doi.org/10.1016/S0168-9002(98)01478-8
http://cds.cern.ch/record/361952
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author Leroy, C
Roy, P
Casse, G L
Glaser, M
Grigoriev, E A
Lemeilleur, F
author_facet Leroy, C
Roy, P
Casse, G L
Glaser, M
Grigoriev, E A
Lemeilleur, F
author_sort Leroy, C
collection CERN
description The electrical characteristics of non-irradiated and irradiated n-type silicon detectors (p -n -n diode) are extracted by fitting a charge transport model to a set of experimental data obtained from the measurememt of the current pulse response induced by a and b particles. . The detectors were irradiated with either \@1 MeV neutrons up to a fluence of 9.92 x 10 n/cm or with 24 GeV/c protons up to a fluence if 10.6 x 10 p/cm . After n- to p- type inversion, a small junction on the p side of the detector is introduced to fit the experimental data and to account for the evolution fo the electr ical characterist
id cern-361952
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 1998
record_format invenio
spelling cern-3619522019-09-30T06:29:59Zdoi:10.1016/S0168-9002(98)01478-8http://cds.cern.ch/record/361952engLeroy, CRoy, PCasse, G LGlaser, MGrigoriev, E ALemeilleur, FStudy of charge transport in non-irradiated and irradiated silicon detectorsDetectors and Experimental TechniquesThe electrical characteristics of non-irradiated and irradiated n-type silicon detectors (p -n -n diode) are extracted by fitting a charge transport model to a set of experimental data obtained from the measurememt of the current pulse response induced by a and b particles. . The detectors were irradiated with either \@1 MeV neutrons up to a fluence of 9.92 x 10 n/cm or with 24 GeV/c protons up to a fluence if 10.6 x 10 p/cm . After n- to p- type inversion, a small junction on the p side of the detector is introduced to fit the experimental data and to account for the evolution fo the electr ical characteristCERN-EP-98-105oai:cds.cern.ch:3619521998-06-05
spellingShingle Detectors and Experimental Techniques
Leroy, C
Roy, P
Casse, G L
Glaser, M
Grigoriev, E A
Lemeilleur, F
Study of charge transport in non-irradiated and irradiated silicon detectors
title Study of charge transport in non-irradiated and irradiated silicon detectors
title_full Study of charge transport in non-irradiated and irradiated silicon detectors
title_fullStr Study of charge transport in non-irradiated and irradiated silicon detectors
title_full_unstemmed Study of charge transport in non-irradiated and irradiated silicon detectors
title_short Study of charge transport in non-irradiated and irradiated silicon detectors
title_sort study of charge transport in non-irradiated and irradiated silicon detectors
topic Detectors and Experimental Techniques
url https://dx.doi.org/10.1016/S0168-9002(98)01478-8
http://cds.cern.ch/record/361952
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AT royp studyofchargetransportinnonirradiatedandirradiatedsilicondetectors
AT cassegl studyofchargetransportinnonirradiatedandirradiatedsilicondetectors
AT glaserm studyofchargetransportinnonirradiatedandirradiatedsilicondetectors
AT grigorievea studyofchargetransportinnonirradiatedandirradiatedsilicondetectors
AT lemeilleurf studyofchargetransportinnonirradiatedandirradiatedsilicondetectors

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