Cargando…
High laser damage threshold $HfO_{2}/SiO_{2}$ mirrors manufactured by sputtering process
Autores principales: | Fornier, A, Bernardino, D, Iam, O, Néauport, J, Dufour, F, Schmitt, B, Mackowski, J M |
---|---|
Lenguaje: | eng |
Publicado: |
1998
|
Materias: | |
Acceso en línea: | http://cds.cern.ch/record/369951 |
Ejemplares similares
-
Ion Drift and Polarization in Thin SiO(2) and HfO(2) Layers Inserted in Silicon on Sapphire
por: Popov, Vladimir P., et al.
Publicado: (2022) -
Enhancement of Resistive Switching Performance in Hafnium Oxide (HfO(2)) Devices via Sol-Gel Method Stacking Tri-Layer HfO(2)/Al-ZnO/HfO(2) Structures
por: Xu, Yuan-Dong, et al.
Publicado: (2022) -
Synthesis of freestanding HfO(2 )nanostructures
por: Kidd, Timothy, et al.
Publicado: (2011) -
Resistive switching of the HfO(x)/HfO(2) bilayer heterostructure and its transmission characteristics as a synapse
por: Tan, Tingting, et al.
Publicado: (2018) -
High‐Uniformity Threshold Switching HfO(2)‐Based Selectors with Patterned Ag Nanodots
por: Li, Yujia, et al.
Publicado: (2020)