Cargando…
Charge Transport in Non-Irradiated and Irradiated Silicon Detectors
A model describing the transport of the carriers of the charge deposited in n-type silicon detectors by ionizing particles is presented. In order to reproduce the experimental current pulse responses induced by alpha and beta particles in non-irradiated and irradiated detectors up to fluences ($\Phi...
| Autores principales: | , , , , , |
|---|---|
| Lenguaje: | eng |
| Publicado: |
1998
|
| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1016/S0168-9002(99)00437-4 http://cds.cern.ch/record/372252 |