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Charge Transport in Non-Irradiated and Irradiated Silicon Detectors

A model describing the transport of the carriers of the charge deposited in n-type silicon detectors by ionizing particles is presented. In order to reproduce the experimental current pulse responses induced by alpha and beta particles in non-irradiated and irradiated detectors up to fluences ($\Phi...

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Detalles Bibliográficos
Autores principales:	Leroy, C, Roy, P, Casse, G L, Glaser, M, Grigoriev, E A, Lemeilleur, F
Lenguaje:	eng
Publicado:	1998
Materias:	Detectors and Experimental Techniques
Acceso en línea:	https://dx.doi.org/10.1016/S0168-9002(99)00437-4 http://cds.cern.ch/record/372252

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