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Charge Transport in Non-Irradiated and Irradiated Silicon Diodes
A model describing the transport of charge carriers generated in silicon detectors (standard planar float zone and MESA diodes) by ionizing particles is presented. The current pulse response induced by $\alpha$ and $\beta$ particles in non-irradiated detectors and detectors irradiated up to fluences...
| Autores principales: | , , , , , |
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| Lenguaje: | eng |
| Publicado: |
1998
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| Materias: | |
| Acceso en línea: | http://cds.cern.ch/record/385375 |