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Charge collection efficiency of irradiated silicon detectors operated at cryogenic temperatures
The charge collection efficiency (CCE) of heavily irradiated silicon diode detectors was investigated at temperatures between 77 and 200 K. The CCE was found to depend on the radiation dose, bias voltage value and history, temperature, and bias current generated by light. The detector irradiated to...
Autores principales: | , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , |
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Lenguaje: | eng |
Publicado: |
1999
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Materias: | |
Acceso en línea: | https://dx.doi.org/10.1016/S0168-9002(99)00799-8 http://cds.cern.ch/record/404351 |
_version_ | 1780894303116066816 |
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author | Borer, K Janos, S Palmieri, V G Dezillie, B Li, Z Collins, P Niinikoski, T O Lourenço, C Sonderegger, P Borchi, E Bruzzi, Mara Pirollo, S Granata, V Pagano, S Chapuy, S Dimcovski, Zlatomir Grigoriev, E Bell, W Devine, S R H O'Shea, V Smith, K Berglund, P de Boer, Wim Hauler, F Heising, S Jungermann, L Casagrande, L Cindro, V Mikuz, M Zavrtanik, M Da Vià, C Esposito, A P Konorov, I Paul, S Schmitt, L Buontempo, S D'Ambrosio, N Ruggiero, G Eremin, V V Verbitskaya, E |
author_facet | Borer, K Janos, S Palmieri, V G Dezillie, B Li, Z Collins, P Niinikoski, T O Lourenço, C Sonderegger, P Borchi, E Bruzzi, Mara Pirollo, S Granata, V Pagano, S Chapuy, S Dimcovski, Zlatomir Grigoriev, E Bell, W Devine, S R H O'Shea, V Smith, K Berglund, P de Boer, Wim Hauler, F Heising, S Jungermann, L Casagrande, L Cindro, V Mikuz, M Zavrtanik, M Da Vià, C Esposito, A P Konorov, I Paul, S Schmitt, L Buontempo, S D'Ambrosio, N Ruggiero, G Eremin, V V Verbitskaya, E |
author_sort | Borer, K |
collection | CERN |
description | The charge collection efficiency (CCE) of heavily irradiated silicon diode detectors was investigated at temperatures between 77 and 200 K. The CCE was found to depend on the radiation dose, bias voltage value and history, temperature, and bias current generated by light. The detector irradiated to the highest fluence 2·1015 n/cm2 yields a MIP signal of at least 15000 e- both at 250 V forward bias voltage, and at 250 V reverse bias voltage in the presence of a light-generated current. The "Lazarus effect" was thus shown to extend to fluences at least ten times higher than was previously studied. |
id | cern-404351 |
institution | Organización Europea para la Investigación Nuclear |
language | eng |
publishDate | 1999 |
record_format | invenio |
spelling | cern-4043512019-09-30T06:29:59Zdoi:10.1016/S0168-9002(99)00799-8http://cds.cern.ch/record/404351engBorer, KJanos, SPalmieri, V GDezillie, BLi, ZCollins, PNiinikoski, T OLourenço, CSonderegger, PBorchi, EBruzzi, MaraPirollo, SGranata, VPagano, SChapuy, SDimcovski, ZlatomirGrigoriev, EBell, WDevine, S R HO'Shea, VSmith, KBerglund, Pde Boer, WimHauler, FHeising, SJungermann, LCasagrande, LCindro, VMikuz, MZavrtanik, MDa Vià, CEsposito, A PKonorov, IPaul, SSchmitt, LBuontempo, SD'Ambrosio, NRuggiero, GEremin, V VVerbitskaya, ECharge collection efficiency of irradiated silicon detectors operated at cryogenic temperaturesDetectors and Experimental TechniquesThe charge collection efficiency (CCE) of heavily irradiated silicon diode detectors was investigated at temperatures between 77 and 200 K. The CCE was found to depend on the radiation dose, bias voltage value and history, temperature, and bias current generated by light. The detector irradiated to the highest fluence 2·1015 n/cm2 yields a MIP signal of at least 15000 e- both at 250 V forward bias voltage, and at 250 V reverse bias voltage in the presence of a light-generated current. The "Lazarus effect" was thus shown to extend to fluences at least ten times higher than was previously studied.CERN-EP-99-102oai:cds.cern.ch:4043511999-07-20 |
spellingShingle | Detectors and Experimental Techniques Borer, K Janos, S Palmieri, V G Dezillie, B Li, Z Collins, P Niinikoski, T O Lourenço, C Sonderegger, P Borchi, E Bruzzi, Mara Pirollo, S Granata, V Pagano, S Chapuy, S Dimcovski, Zlatomir Grigoriev, E Bell, W Devine, S R H O'Shea, V Smith, K Berglund, P de Boer, Wim Hauler, F Heising, S Jungermann, L Casagrande, L Cindro, V Mikuz, M Zavrtanik, M Da Vià, C Esposito, A P Konorov, I Paul, S Schmitt, L Buontempo, S D'Ambrosio, N Ruggiero, G Eremin, V V Verbitskaya, E Charge collection efficiency of irradiated silicon detectors operated at cryogenic temperatures |
title | Charge collection efficiency of irradiated silicon detectors operated at cryogenic temperatures |
title_full | Charge collection efficiency of irradiated silicon detectors operated at cryogenic temperatures |
title_fullStr | Charge collection efficiency of irradiated silicon detectors operated at cryogenic temperatures |
title_full_unstemmed | Charge collection efficiency of irradiated silicon detectors operated at cryogenic temperatures |
title_short | Charge collection efficiency of irradiated silicon detectors operated at cryogenic temperatures |
title_sort | charge collection efficiency of irradiated silicon detectors operated at cryogenic temperatures |
topic | Detectors and Experimental Techniques |
url | https://dx.doi.org/10.1016/S0168-9002(99)00799-8 http://cds.cern.ch/record/404351 |
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