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Charge collection efficiency of irradiated silicon detectors operated at cryogenic temperatures

The charge collection efficiency (CCE) of heavily irradiated silicon diode detectors was investigated at temperatures between 77 and 200 K. The CCE was found to depend on the radiation dose, bias voltage value and history, temperature, and bias current generated by light. The detector irradiated to...

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Autores principales: Borer, K, Janos, S, Palmieri, V G, Dezillie, B, Li, Z, Collins, P, Niinikoski, T O, Lourenço, C, Sonderegger, P, Borchi, E, Bruzzi, Mara, Pirollo, S, Granata, V, Pagano, S, Chapuy, S, Dimcovski, Zlatomir, Grigoriev, E, Bell, W, Devine, S R H, O'Shea, V, Smith, K, Berglund, P, de Boer, Wim, Hauler, F, Heising, S, Jungermann, L, Casagrande, L, Cindro, V, Mikuz, M, Zavrtanik, M, Da Vià, C, Esposito, A P, Konorov, I, Paul, S, Schmitt, L, Buontempo, S, D'Ambrosio, N, Ruggiero, G, Eremin, V V, Verbitskaya, E
Lenguaje:eng
Publicado: 1999
Materias:
Acceso en línea:https://dx.doi.org/10.1016/S0168-9002(99)00799-8
http://cds.cern.ch/record/404351
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author Borer, K
Janos, S
Palmieri, V G
Dezillie, B
Li, Z
Collins, P
Niinikoski, T O
Lourenço, C
Sonderegger, P
Borchi, E
Bruzzi, Mara
Pirollo, S
Granata, V
Pagano, S
Chapuy, S
Dimcovski, Zlatomir
Grigoriev, E
Bell, W
Devine, S R H
O'Shea, V
Smith, K
Berglund, P
de Boer, Wim
Hauler, F
Heising, S
Jungermann, L
Casagrande, L
Cindro, V
Mikuz, M
Zavrtanik, M
Da Vià, C
Esposito, A P
Konorov, I
Paul, S
Schmitt, L
Buontempo, S
D'Ambrosio, N
Ruggiero, G
Eremin, V V
Verbitskaya, E
author_facet Borer, K
Janos, S
Palmieri, V G
Dezillie, B
Li, Z
Collins, P
Niinikoski, T O
Lourenço, C
Sonderegger, P
Borchi, E
Bruzzi, Mara
Pirollo, S
Granata, V
Pagano, S
Chapuy, S
Dimcovski, Zlatomir
Grigoriev, E
Bell, W
Devine, S R H
O'Shea, V
Smith, K
Berglund, P
de Boer, Wim
Hauler, F
Heising, S
Jungermann, L
Casagrande, L
Cindro, V
Mikuz, M
Zavrtanik, M
Da Vià, C
Esposito, A P
Konorov, I
Paul, S
Schmitt, L
Buontempo, S
D'Ambrosio, N
Ruggiero, G
Eremin, V V
Verbitskaya, E
author_sort Borer, K
collection CERN
description The charge collection efficiency (CCE) of heavily irradiated silicon diode detectors was investigated at temperatures between 77 and 200 K. The CCE was found to depend on the radiation dose, bias voltage value and history, temperature, and bias current generated by light. The detector irradiated to the highest fluence 2·1015 n/cm2 yields a MIP signal of at least 15000 e- both at 250 V forward bias voltage, and at 250 V reverse bias voltage in the presence of a light-generated current. The "Lazarus effect" was thus shown to extend to fluences at least ten times higher than was previously studied.
id cern-404351
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 1999
record_format invenio
spelling cern-4043512019-09-30T06:29:59Zdoi:10.1016/S0168-9002(99)00799-8http://cds.cern.ch/record/404351engBorer, KJanos, SPalmieri, V GDezillie, BLi, ZCollins, PNiinikoski, T OLourenço, CSonderegger, PBorchi, EBruzzi, MaraPirollo, SGranata, VPagano, SChapuy, SDimcovski, ZlatomirGrigoriev, EBell, WDevine, S R HO'Shea, VSmith, KBerglund, Pde Boer, WimHauler, FHeising, SJungermann, LCasagrande, LCindro, VMikuz, MZavrtanik, MDa Vià, CEsposito, A PKonorov, IPaul, SSchmitt, LBuontempo, SD'Ambrosio, NRuggiero, GEremin, V VVerbitskaya, ECharge collection efficiency of irradiated silicon detectors operated at cryogenic temperaturesDetectors and Experimental TechniquesThe charge collection efficiency (CCE) of heavily irradiated silicon diode detectors was investigated at temperatures between 77 and 200 K. The CCE was found to depend on the radiation dose, bias voltage value and history, temperature, and bias current generated by light. The detector irradiated to the highest fluence 2·1015 n/cm2 yields a MIP signal of at least 15000 e- both at 250 V forward bias voltage, and at 250 V reverse bias voltage in the presence of a light-generated current. The "Lazarus effect" was thus shown to extend to fluences at least ten times higher than was previously studied.CERN-EP-99-102oai:cds.cern.ch:4043511999-07-20
spellingShingle Detectors and Experimental Techniques
Borer, K
Janos, S
Palmieri, V G
Dezillie, B
Li, Z
Collins, P
Niinikoski, T O
Lourenço, C
Sonderegger, P
Borchi, E
Bruzzi, Mara
Pirollo, S
Granata, V
Pagano, S
Chapuy, S
Dimcovski, Zlatomir
Grigoriev, E
Bell, W
Devine, S R H
O'Shea, V
Smith, K
Berglund, P
de Boer, Wim
Hauler, F
Heising, S
Jungermann, L
Casagrande, L
Cindro, V
Mikuz, M
Zavrtanik, M
Da Vià, C
Esposito, A P
Konorov, I
Paul, S
Schmitt, L
Buontempo, S
D'Ambrosio, N
Ruggiero, G
Eremin, V V
Verbitskaya, E
Charge collection efficiency of irradiated silicon detectors operated at cryogenic temperatures
title Charge collection efficiency of irradiated silicon detectors operated at cryogenic temperatures
title_full Charge collection efficiency of irradiated silicon detectors operated at cryogenic temperatures
title_fullStr Charge collection efficiency of irradiated silicon detectors operated at cryogenic temperatures
title_full_unstemmed Charge collection efficiency of irradiated silicon detectors operated at cryogenic temperatures
title_short Charge collection efficiency of irradiated silicon detectors operated at cryogenic temperatures
title_sort charge collection efficiency of irradiated silicon detectors operated at cryogenic temperatures
topic Detectors and Experimental Techniques
url https://dx.doi.org/10.1016/S0168-9002(99)00799-8
http://cds.cern.ch/record/404351
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