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Irradiation of optically activated SI-GaAs high-voltage switches with low and high energy protons
Semi-Insulating Gallium Arsenide (SI-GaAs) devices have been tested for radiation hardness with 3-4 MeV or 24 GeV proton beams. These devices can be operated in dc mode as optically activated electrical switches up to 1 kV. Both single switches (vertical Schottky diodes) and multiple (8) switches (p...
| Autores principales: | , , , , , , , , , , , |
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| Lenguaje: | eng |
| Publicado: |
1999
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1109/23.775500 http://cds.cern.ch/record/409267 |