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Irradiation of optically activated SI-GaAs high-voltage switches with low and high energy protons

Semi-Insulating Gallium Arsenide (SI-GaAs) devices have been tested for radiation hardness with 3-4 MeV or 24 GeV proton beams. These devices can be operated in dc mode as optically activated electrical switches up to 1 kV. Both single switches (vertical Schottky diodes) and multiple (8) switches (p...

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Detalles Bibliográficos
Autores principales:	Bertolucci, Ennio, Conti, M, Mettivier, G, Russo, P, Bisogni, M G, Bottigli, U, Fantacci, M E, Stefanini, A, Cola, A, Quaranta, F, Vasanelli, L, Stefanini, G
Lenguaje:	eng
Publicado:	1999
Materias:	Detectors and Experimental Techniques
Acceso en línea:	https://dx.doi.org/10.1109/23.775500 http://cds.cern.ch/record/409267

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