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Combination of emission channeling, photoluminescence and Mossbauer spectroscopy to identify rare earth defect complexes in semiconductors
Implanted radioactive /sup 167/Tm//sup 167/Er and /sup 169/Yb//sup 169/Tm impurities in Si and GaN were studied with emission channeling and photoluminescence spectroscopy. The effect of co-doping with oxygen on the rare earth (RE) lattice sites and their luminescence behavior was investigated. Tm a...
| Autores principales: | , , , , , , , |
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| Lenguaje: | eng |
| Publicado: |
1999
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1023/A:1017064532027 http://cds.cern.ch/record/419570 |