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Introduction of high oxygen concentrations into silicon wafers by high-temperature diffusion
The tolerance of silicon detectors to hadron irradiation can be improved by the introduction of a high concentration of oxygen into the starting material. High-resistivity Floating-Zone (FZ) silicon is required for detectors used in particle physics applications. A significantly high oxygen concentr...
| Autores principales: | , , , , |
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| Lenguaje: | eng |
| Publicado: |
1999
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1016/S0168-9002(99)00869-4 http://cds.cern.ch/record/426292 |