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Introduction of high oxygen concentrations into silicon wafers by high-temperature diffusion

The tolerance of silicon detectors to hadron irradiation can be improved by the introduction of a high concentration of oxygen into the starting material. High-resistivity Floating-Zone (FZ) silicon is required for detectors used in particle physics applications. A significantly high oxygen concentr...

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Detalles Bibliográficos
Autores principales:	Casse, G L, Glaser, M, Lemeilleur, F, Ruzin, A, Wegrzecki, M
Lenguaje:	eng
Publicado:	1999
Materias:	Detectors and Experimental Techniques
Acceso en línea:	https://dx.doi.org/10.1016/S0168-9002(99)00869-4 http://cds.cern.ch/record/426292

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