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Layout techniques to enhance the radiation tolerance of standard CMOS technologies demonstrated on a pixel detector readout chip
A new pixel readout prototype has been developed at CERN for high- energy physics applications. This full mixed mode circuit has been implemented in a commercial 0.5 mu m CMOS technology. Its radiation tolerance has been enhanced by designing all NMOS transistors in enclosed geometry and introducing...
| Autores principales: | , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , |
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| Lenguaje: | eng |
| Publicado: |
2000
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1016/S0168-9002(99)00899-2 http://cds.cern.ch/record/427347 |
| _version_ | 1780895131921022976 |
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| author | Snoeys, W Faccio, F Burns, M Campbell, M Cantatore, E Carrer, N Casagrande, L Cavagnoli, A Dachs, C Di Liberto, S Formenti, F Giraldo, A Heijne, Erik H M Jarron, Pierre Letheren, M F Marchioro, A Martinengo, P Meddi, F Mikulec, B Morando, M Morel, M Noah, E Paccagnella, A Ropotar, I Saladino, S Sansen, Willy Santopietro, F Scarlassara, F Segato, G F Signe, P M Soramel, F Vannucci, Luigi Vleugels, K |
| author_facet | Snoeys, W Faccio, F Burns, M Campbell, M Cantatore, E Carrer, N Casagrande, L Cavagnoli, A Dachs, C Di Liberto, S Formenti, F Giraldo, A Heijne, Erik H M Jarron, Pierre Letheren, M F Marchioro, A Martinengo, P Meddi, F Mikulec, B Morando, M Morel, M Noah, E Paccagnella, A Ropotar, I Saladino, S Sansen, Willy Santopietro, F Scarlassara, F Segato, G F Signe, P M Soramel, F Vannucci, Luigi Vleugels, K |
| author_sort | Snoeys, W |
| collection | CERN |
| description | A new pixel readout prototype has been developed at CERN for high- energy physics applications. This full mixed mode circuit has been implemented in a commercial 0.5 mu m CMOS technology. Its radiation tolerance has been enhanced by designing all NMOS transistors in enclosed geometry and introducing guardrings wherever necessary. The technique is explained and its effectiveness demonstrated on various irradiation measurements on individual transistors and on the prototype. Circuit performance started to degrade only after a total dose of 600 krad-1.7 Mrad depending on the type of radiation. 10 keV X-rays, /sup 60/Co gamma-rays, 6.5 MeV protons, and minimum ionizing particles were used. Implications of this layout approach on the circuit design and perspectives for even deeper submicron technologies are discussed. (20 refs). |
| id | cern-427347 |
| institution | Organización Europea para la Investigación Nuclear |
| language | eng |
| publishDate | 2000 |
| record_format | invenio |
| spelling | cern-4273472019-09-30T06:29:59Zdoi:10.1016/S0168-9002(99)00899-2http://cds.cern.ch/record/427347engSnoeys, WFaccio, FBurns, MCampbell, MCantatore, ECarrer, NCasagrande, LCavagnoli, ADachs, CDi Liberto, SFormenti, FGiraldo, AHeijne, Erik H MJarron, PierreLetheren, M FMarchioro, AMartinengo, PMeddi, FMikulec, BMorando, MMorel, MNoah, EPaccagnella, ARopotar, ISaladino, SSansen, WillySantopietro, FScarlassara, FSegato, G FSigne, P MSoramel, FVannucci, LuigiVleugels, KLayout techniques to enhance the radiation tolerance of standard CMOS technologies demonstrated on a pixel detector readout chipDetectors and Experimental TechniquesA new pixel readout prototype has been developed at CERN for high- energy physics applications. This full mixed mode circuit has been implemented in a commercial 0.5 mu m CMOS technology. Its radiation tolerance has been enhanced by designing all NMOS transistors in enclosed geometry and introducing guardrings wherever necessary. The technique is explained and its effectiveness demonstrated on various irradiation measurements on individual transistors and on the prototype. Circuit performance started to degrade only after a total dose of 600 krad-1.7 Mrad depending on the type of radiation. 10 keV X-rays, /sup 60/Co gamma-rays, 6.5 MeV protons, and minimum ionizing particles were used. Implications of this layout approach on the circuit design and perspectives for even deeper submicron technologies are discussed. (20 refs).oai:cds.cern.ch:4273472000 |
| spellingShingle | Detectors and Experimental Techniques Snoeys, W Faccio, F Burns, M Campbell, M Cantatore, E Carrer, N Casagrande, L Cavagnoli, A Dachs, C Di Liberto, S Formenti, F Giraldo, A Heijne, Erik H M Jarron, Pierre Letheren, M F Marchioro, A Martinengo, P Meddi, F Mikulec, B Morando, M Morel, M Noah, E Paccagnella, A Ropotar, I Saladino, S Sansen, Willy Santopietro, F Scarlassara, F Segato, G F Signe, P M Soramel, F Vannucci, Luigi Vleugels, K Layout techniques to enhance the radiation tolerance of standard CMOS technologies demonstrated on a pixel detector readout chip |
| title | Layout techniques to enhance the radiation tolerance of standard CMOS technologies demonstrated on a pixel detector readout chip |
| title_full | Layout techniques to enhance the radiation tolerance of standard CMOS technologies demonstrated on a pixel detector readout chip |
| title_fullStr | Layout techniques to enhance the radiation tolerance of standard CMOS technologies demonstrated on a pixel detector readout chip |
| title_full_unstemmed | Layout techniques to enhance the radiation tolerance of standard CMOS technologies demonstrated on a pixel detector readout chip |
| title_short | Layout techniques to enhance the radiation tolerance of standard CMOS technologies demonstrated on a pixel detector readout chip |
| title_sort | layout techniques to enhance the radiation tolerance of standard cmos technologies demonstrated on a pixel detector readout chip |
| topic | Detectors and Experimental Techniques |
| url | https://dx.doi.org/10.1016/S0168-9002(99)00899-2 http://cds.cern.ch/record/427347 |
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