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Investigation of trapping levels in standard, nitrogenated and oxygenated Si p-n junctions by thermally stimulated currents
The trapping levels induced in p-n Si junctions by irradiation with 24 GeV protons were investigated using thermally stimulated currents (TSC) methods in the 90-300 K temperature range. Several trapping levels, with activation energies between 0.27 and 0.57 eV, were found. The spatial distribution o...
| Autores principales: | , , , , |
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| Lenguaje: | eng |
| Publicado: |
2000
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1016/S0168-9002(99)00845-1 http://cds.cern.ch/record/427350 |