Cargando…
Investigation on the improved radiation hardness of silicon detectors with high oxygen concentration
We present an investigation on the influence of the oxygen concentration on radiation-induced changes in the effective doping concentration of silicon detectors. Diodes fabricated from silicon with interstitial oxygen content ranging from below 2*10/sup 14/ to 9*10/sup 17/ cm/sup -3/ have been irrad...
| Autores principales: | , , |
|---|---|
| Lenguaje: | eng |
| Publicado: |
2000
|
| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1016/S0168-9002(99)00842-6 http://cds.cern.ch/record/427352 |