Cargando…
Experimental evidence of deep electron and hole trapping levels in high fluence proton irradiated p-n Si junctions using optical charging spectroscopy
Optical charging spectroscopy (OCS) is first time reported as applied to p-n junctions. The existence of one deep trapping level for electrons and two deep trapping levels for holes was put into evidence, using this method, in proton irradiated p/sup +/-n-n/sup +/ silicon structures. An analytical f...
| Autores principales: | , , , |
|---|---|
| Lenguaje: | eng |
| Publicado: |
2000
|
| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1016/S0168-9002(99)00887-6 http://cds.cern.ch/record/427353 |
| Sumario: | Optical charging spectroscopy (OCS) is first time reported as applied to p-n junctions. The existence of one deep trapping level for electrons and two deep trapping levels for holes was put into evidence, using this method, in proton irradiated p/sup +/-n-n/sup +/ silicon structures. An analytical formula for the OCS discharging current for this type of structures was deduced. (19 refs). |
|---|