Experimental evidence of deep electron and hole trapping levels in high fluence proton irradiated p-n Si junctions using optical charging spectroscopy

Optical charging spectroscopy (OCS) is first time reported as applied to p-n junctions. The existence of one deep trapping level for electrons and two deep trapping levels for holes was put into evidence, using this method, in proton irradiated p/sup +/-n-n/sup +/ silicon structures. An analytical f...

Descripción completa

Detalles Bibliográficos
Autores principales: Pintilie, I, Tivarus, C, Botila, T, Petre, D
Lenguaje:eng
Publicado: 2000
Materias:
Detectors and Experimental Techniques
Acceso en línea:https://dx.doi.org/10.1016/S0168-9002(99)00887-6
http://cds.cern.ch/record/427353
_version_ 1780895133202382848
author Pintilie, I
Tivarus, C
Botila, T
Petre, D
author_facet Pintilie, I
Tivarus, C
Botila, T
Petre, D
author_sort Pintilie, I
collection CERN
description Optical charging spectroscopy (OCS) is first time reported as applied to p-n junctions. The existence of one deep trapping level for electrons and two deep trapping levels for holes was put into evidence, using this method, in proton irradiated p/sup +/-n-n/sup +/ silicon structures. An analytical formula for the OCS discharging current for this type of structures was deduced. (19 refs).
id cern-427353
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2000
record_format invenio
spelling cern-4273532019-09-30T06:29:59Zdoi:10.1016/S0168-9002(99)00887-6http://cds.cern.ch/record/427353engPintilie, ITivarus, CBotila, TPetre, DExperimental evidence of deep electron and hole trapping levels in high fluence proton irradiated p-n Si junctions using optical charging spectroscopyDetectors and Experimental TechniquesOptical charging spectroscopy (OCS) is first time reported as applied to p-n junctions. The existence of one deep trapping level for electrons and two deep trapping levels for holes was put into evidence, using this method, in proton irradiated p/sup +/-n-n/sup +/ silicon structures. An analytical formula for the OCS discharging current for this type of structures was deduced. (19 refs).oai:cds.cern.ch:4273532000
spellingShingle Detectors and Experimental Techniques
Pintilie, I
Tivarus, C
Botila, T
Petre, D
Experimental evidence of deep electron and hole trapping levels in high fluence proton irradiated p-n Si junctions using optical charging spectroscopy
title Experimental evidence of deep electron and hole trapping levels in high fluence proton irradiated p-n Si junctions using optical charging spectroscopy
title_full Experimental evidence of deep electron and hole trapping levels in high fluence proton irradiated p-n Si junctions using optical charging spectroscopy
title_fullStr Experimental evidence of deep electron and hole trapping levels in high fluence proton irradiated p-n Si junctions using optical charging spectroscopy
title_full_unstemmed Experimental evidence of deep electron and hole trapping levels in high fluence proton irradiated p-n Si junctions using optical charging spectroscopy
title_short Experimental evidence of deep electron and hole trapping levels in high fluence proton irradiated p-n Si junctions using optical charging spectroscopy
title_sort experimental evidence of deep electron and hole trapping levels in high fluence proton irradiated p-n si junctions using optical charging spectroscopy
topic Detectors and Experimental Techniques
url https://dx.doi.org/10.1016/S0168-9002(99)00887-6
http://cds.cern.ch/record/427353
work_keys_str_mv AT pintiliei experimentalevidenceofdeepelectronandholetrappinglevelsinhighfluenceprotonirradiatedpnsijunctionsusingopticalchargingspectroscopy
AT tivarusc experimentalevidenceofdeepelectronandholetrappinglevelsinhighfluenceprotonirradiatedpnsijunctionsusingopticalchargingspectroscopy
AT botilat experimentalevidenceofdeepelectronandholetrappinglevelsinhighfluenceprotonirradiatedpnsijunctionsusingopticalchargingspectroscopy
AT petred experimentalevidenceofdeepelectronandholetrappinglevelsinhighfluenceprotonirradiatedpnsijunctionsusingopticalchargingspectroscopy

Ejemplares similares