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Performance of Honeywell RICMOS-IV SOI transistors after irradiation to 27 Mrad(Si) by 63.3 MeV protons
We present results of an exposure of Honeywell RICMOS-IV SOI transistors produced in a developmental run to 2*10/sup 14/ 63.3 MeV protons at the UCD cyclotron radiation test beam (27 Mrad (Si)). In terms of surface damage, this corresponds to almost twice the dose expected for the CMS pixel detector...
| Autores principales: | , |
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| Lenguaje: | eng |
| Publicado: |
1999
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| Acceso en línea: | https://dx.doi.org/10.1016/S0920-5632(99)00628-3 http://cds.cern.ch/record/428722 |