Performance of Honeywell RICMOS-IV SOI transistors after irradiation to 27 Mrad(Si) by 63.3 MeV protons

We present results of an exposure of Honeywell RICMOS-IV SOI transistors produced in a developmental run to 2*10/sup 14/ 63.3 MeV protons at the UCD cyclotron radiation test beam (27 Mrad (Si)). In terms of surface damage, this corresponds to almost twice the dose expected for the CMS pixel detector during its useful life at the LHC collider. The irradiated transistors include n-channel MOSFETs similar to the front-end transistors of a pixel readout suitable for use at hadron colliders. Data are presented for MOSFETs on radiation- induced changes in thresholds, transconductance, maximum voltage gain and noise. Circuit simulations using the measured noise data indicate that the pixel readout would continue to function satisfactorily in the CMS radiation environment. (8 refs).