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Performance of Honeywell RICMOS-IV SOI transistors after irradiation to 27 Mrad(Si) by 63.3 MeV protons

We present results of an exposure of Honeywell RICMOS-IV SOI transistors produced in a developmental run to 2*10/sup 14/ 63.3 MeV protons at the UCD cyclotron radiation test beam (27 Mrad (Si)). In terms of surface damage, this corresponds to almost twice the dose expected for the CMS pixel detector...

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Detalles Bibliográficos
Autores principales: Pellett, D E, Liu, S T
Lenguaje:eng
Publicado: 1999
Materias:
Acceso en línea:https://dx.doi.org/10.1016/S0920-5632(99)00628-3
http://cds.cern.ch/record/428722