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Analysis of the transient response of LED-illuminated diodes under heavy radiation damage
The changes of the electrical properties induced by hadron irradiation on silicon detectors have been studied by using the device level simulator HFIELDS. The model of the radiation damage assumes the introduction of radiation-induced acceptor and donor "deep-levels". The electric field pr...
| Autores principales: | , , , , |
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| Lenguaje: | eng |
| Publicado: |
2000
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1016/S0168-9002(99)01093-1 http://cds.cern.ch/record/437503 |