Study of the discharge gas trapping during thin film growth

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Discharge gas trapping in thin films produced by sputtering is known to be due to high energy neutrals bouncing back from the cathode. Qualitatively, the phenomenon is enhanced by raising the discharge voltage and is strongly dependent on the atomic masses of the discharge gas and of the cathode mat...

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Detalles Bibliográficos
Autores principales: Calatroni, Sergio, Amorosi, S, Anderle, M, Benvenuti, Cristoforo, Carver, J, Chiggiato, P, Neupert, H, Vollenberg, W
Lenguaje:eng
Publicado: 1999
Materias:
Engineering
Acceso en línea:http://cds.cern.ch/record/437646
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author Calatroni, Sergio
Amorosi, S
Anderle, M
Benvenuti, Cristoforo
Carver, J
Chiggiato, P
Neupert, H
Vollenberg, W
author_facet Calatroni, Sergio
Amorosi, S
Anderle, M
Benvenuti, Cristoforo
Carver, J
Chiggiato, P
Neupert, H
Vollenberg, W
author_sort Calatroni, Sergio
collection CERN
description Discharge gas trapping in thin films produced by sputtering is known to be due to high energy neutrals bouncing back from the cathode. Qualitatively, the phenomenon is enhanced by raising the discharge voltage and is strongly dependent on the atomic masses of the discharge gas and of the cathode material. In addition to these known effects it is shown that, for a given gas, the trapped amount decreases with increasing the melting temperature of the deposited material. The results obtained both by sample melting and laser ablation are presented and discussed.
id cern-437646
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 1999
record_format invenio
spelling cern-4376462019-09-30T06:29:59Zhttp://cds.cern.ch/record/437646engCalatroni, SergioAmorosi, SAnderle, MBenvenuti, CristoforoCarver, JChiggiato, PNeupert, HVollenberg, WStudy of the discharge gas trapping during thin film growthEngineeringDischarge gas trapping in thin films produced by sputtering is known to be due to high energy neutrals bouncing back from the cathode. Qualitatively, the phenomenon is enhanced by raising the discharge voltage and is strongly dependent on the atomic masses of the discharge gas and of the cathode material. In addition to these known effects it is shown that, for a given gas, the trapped amount decreases with increasing the melting temperature of the deposited material. The results obtained both by sample melting and laser ablation are presented and discussed.CERN-EST-99-005-SMoai:cds.cern.ch:4376461999-12-15
spellingShingle Engineering
Calatroni, Sergio
Amorosi, S
Anderle, M
Benvenuti, Cristoforo
Carver, J
Chiggiato, P
Neupert, H
Vollenberg, W
Study of the discharge gas trapping during thin film growth
title Study of the discharge gas trapping during thin film growth
title_full Study of the discharge gas trapping during thin film growth
title_fullStr Study of the discharge gas trapping during thin film growth
title_full_unstemmed Study of the discharge gas trapping during thin film growth
title_short Study of the discharge gas trapping during thin film growth
title_sort study of the discharge gas trapping during thin film growth
topic Engineering
url http://cds.cern.ch/record/437646
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AT carverj studyofthedischargegastrappingduringthinfilmgrowth
AT chiggiatop studyofthedischargegastrappingduringthinfilmgrowth
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