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Lowering the activation temperature of TiZrV non-evaporable getter films

In order to reduce the activation temperature of the TiZrV alloy, thin films of various compositions were produced by three-cathode magnetron sputtering on stainless steel substrates. For the characterisation of the activation behaviour the surface chemical composition has been monitored by Auger El...

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Detalles Bibliográficos
Autores principales: Taborelli, M, Prodromides, A E, Scheuerlein, C
Lenguaje:eng
Publicado: 1999
Materias:
Acceso en línea:http://cds.cern.ch/record/437647
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author Taborelli, M
Prodromides, A E
Scheuerlein, C
author_facet Taborelli, M
Prodromides, A E
Scheuerlein, C
author_sort Taborelli, M
collection CERN
description In order to reduce the activation temperature of the TiZrV alloy, thin films of various compositions were produced by three-cathode magnetron sputtering on stainless steel substrates. For the characterisation of the activation behaviour the surface chemical composition has been monitored by Auger Electron Spectroscopy (AES) during specific in situ thermal cycles. The volume elemental composition of the film has been measured by Energy Dispersive X-ray spectroscopy (EDX) and the morphology (crystal structure and size of the crystallites) has been investigated by X-ray diffraction (XRD). The criteria indicating the sample quality and its dependence on film structure and chemical composition are presented and discussed.
id cern-437647
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 1999
record_format invenio
spelling cern-4376472019-09-30T06:29:59Zhttp://cds.cern.ch/record/437647engTaborelli, MProdromides, A EScheuerlein, CLowering the activation temperature of TiZrV non-evaporable getter filmsEngineeringIn order to reduce the activation temperature of the TiZrV alloy, thin films of various compositions were produced by three-cathode magnetron sputtering on stainless steel substrates. For the characterisation of the activation behaviour the surface chemical composition has been monitored by Auger Electron Spectroscopy (AES) during specific in situ thermal cycles. The volume elemental composition of the film has been measured by Energy Dispersive X-ray spectroscopy (EDX) and the morphology (crystal structure and size of the crystallites) has been investigated by X-ray diffraction (XRD). The criteria indicating the sample quality and its dependence on film structure and chemical composition are presented and discussed.CERN-EST-99-006-SMoai:cds.cern.ch:4376471999-12-15
spellingShingle Engineering
Taborelli, M
Prodromides, A E
Scheuerlein, C
Lowering the activation temperature of TiZrV non-evaporable getter films
title Lowering the activation temperature of TiZrV non-evaporable getter films
title_full Lowering the activation temperature of TiZrV non-evaporable getter films
title_fullStr Lowering the activation temperature of TiZrV non-evaporable getter films
title_full_unstemmed Lowering the activation temperature of TiZrV non-evaporable getter films
title_short Lowering the activation temperature of TiZrV non-evaporable getter films
title_sort lowering the activation temperature of tizrv non-evaporable getter films
topic Engineering
url http://cds.cern.ch/record/437647
work_keys_str_mv AT taborellim loweringtheactivationtemperatureoftizrvnonevaporablegetterfilms
AT prodromidesae loweringtheactivationtemperatureoftizrvnonevaporablegetterfilms
AT scheuerleinc loweringtheactivationtemperatureoftizrvnonevaporablegetterfilms